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| 型号： | NTJD2152PT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET 2P-CH 8V 775MA SOT-363 |
| 产品变化通告： | Product Obsolescence 14/Apr/2010 |
| 产品目录绘图： | MOSFET SOT-363 Pkg |
| 标准包装： | 10 |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 8V |
| 电流 - 连续漏极(Id) @ 25° C： | 775mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 300 毫欧 @ 570mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 4nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 225pF @ 8V |
| 功率 - 最大： | 270mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SOT-363 |
| 包装： | 标准包装 |
| 其它名称： | NTJD2152PT1GOSDKR |
NTJD2152P
Trench Small Signal
MOSFET
8 V, Dual P ? Channel, SC ? 88
ESD Protection
Features
? Leading –8 V Trench for Low R DS(ON) Performance
? ESD Protected Gate
? Small Footprint (2 x 2 mm)
? Same Package as SC ? 70 ? 6
? Pb ? Free Packages are Available
Applications
? Load Power switching
? DC ? DC Conversion
? Li ? Ion Battery Charging Circuits
? Cell Phones, Media Players, Digital Cameras, PDAs
V (BR)DSS
? 8 V
S 1
http://onsemi.com
R DS(on) TYP
0.22 W @ ? 4.5 V
0.32 W @ ? 2.5 V
0.51 W @ ? 1.8 V
SOT ? 363
SC ? 88 (6 LEADS)
1 6
I D Max
? 0.775 A
D 1
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter
Drain ? to ? Source Voltage
Symbol
V DSS
Value
? 8.0
Unit
V
G 1
2
5
G 2
Gate ? to ? Source Voltage
Continuous Drain
Current
(Based on R q JA )
Power Dissipation
(Based on R q JA )
Steady
State
Steady
State
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 85 ° C
V GS
I D
P D
± 8.0
? 0.775
? 0.558
0.27
0.14
V
A
W
D 2
3
4 S 2
Top View
MARKING DIAGRAM &
Continuous Drain Steady T A = 25 ° C
Current State
(Based on R q JL ) T A = 85 ° C
Power Dissipation Steady T A = 25 ° C
(Based on R q JL ) State
T A = 85 ° C
Pulsed Drain Current t ≤ 10 m s
Operating Junction and Storage Temperature
I D
P D
I DM
T J ,
T STG
? 1.1
? 0.8
0.55
0.29
± 1.2
? 55 to
150
A
W
A
° C
1
SC ? 88/SOT ? 363
CASE 419B
STYLE 28
PIN ASSIGNMENT
D1 G2 S2
6
TA M G
G
1
S1 G1 D2
Continuous Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
I S
T L
? 0.775
260
A
° C
TA = Device Code
M = Date Code
G = Pb ? Free Package
(Note: Microdot may be in either location)
THERMAL RESISTANCE RATINGS (Note 1)
Parameter
Junction ? to ? Ambient – Steady State
Junction ? to ? Lead (Drain) – Steady State
Symbol
R q JA
R q JL
Typ
400
194
Max
460
226
Unit
° C/W
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq.
? Semiconductor Components Industries, LLC, 2006
March, 2006 ? Rev. 3
1
Publication Order Number:
NTJD2152/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTJD2152PT2 | 功能描述:MOSFET 8V Dual P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTJD2152PT2G | 功能描述:MOSFET 8V Dual P-Channel ESD Protection RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTJD2152PT4 | 功能描述:MOSFET 8V Dual P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTJD2152PT4G | 功能描述:MOSFET 8V Dual P-Channel ESD Protection RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTJD3158C | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 20 V, +0.63/-0.82 A, SC-88 Complementary, ESD Protected |
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