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| 型号： | NTJD4158CT2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CH 30V/20V SC88-6 |
| 产品变化通告： | Product Discontinuation 27/Jan/2012 |
| 标准包装： | 3,000 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V，20V |
| 电流 - 连续漏极(Id) @ 25° C： | 250mA，880mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.5 欧姆 @ 10mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 100µA |
| 闸电荷(Qg) @ Vgs： | 1.5nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 33pF @ 5V |
| 功率 - 最大： | 270mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SC-88 |
| 包装： | 带卷 (TR) |
NTJD4158C
Small Signal MOSFET
30 V/ ? 20 V, +0.25/ ? 0.88 A,
Complementary, SC ? 88
Features
? Leading 20 V Trench for Low R DS(on) Performance
? ESD Protected Gate
? SC ? 88 Package for Small Footprint (2 x 2 mm)
? This is a Pb ? Free Device
Applications
? DC ? DC Conversion
? Load/Power Management
? Load Switch
? Cell Phones, MP3s, Digital Cameras, PDAs
V (BR)DSS
N ? Ch
30 V
P ? Ch
? 20 V
http://onsemi.com
R DS(on) Typ
1.0 W @ 4.5 V
1.5 W @ 2.5 V
215 m W @ ? 4.5 V
345 m W @ ? 2.5 V
SC ? 88 (SOT ? 363)
(6 ? Leads)
I D Max
0.25 A
? 0.88 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Symbol
Parameter
Value
Unit
S 1
1
6
D 1
Drain ? to ? Source Voltage
N ? Ch
P ? Ch
V DSS
30
? 20
V
G 1
2
5
G 2
Gate ? to ? Source Voltage
N ? Ch
V GS
± 20
V
P ? Ch
± 12
D 2
3
4
S 2
N ? Channel
Continuous Drain
Current (Note 1)
P ? Channel
Continuous Drain
Current (Note 1)
Steady
State
Steady
State
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 85 ° C
I D
0.25
0.18
? 0.88
? 0.63
A
(Top View)
MARKING DIAGRAM &
PIN ASSIGNMENT
T A = 25 ° C
rent tp = 10 m s
Power Dissipation Steady
(Note 1) State
Pulsed Drain Cur- N ? Ch
P ? Ch
Operating Junction and Storage Temperature
P D
I DM
T J , T stg
0.27
0.5
? 3.0
? 55 to
150
W
A
° C
1
SC ? 88 (SOT ? 363)
CASE 419B
STYLE 26
6
1
D1 G2 S2
TCD M G
G
S1 G1 D2
Source Current (Body Diode)
N ? Ch
P ? Ch
I S
0.25
? 0.48
A
TCD
M
= Specific Device Code
= Date Code
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
T L
260
° C
G = Pb ? Free Package
(Note: Microdot may be in either location)
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
ORDERING INFORMATION
Junction ? to ? Ambient – Steady State (Note 1) R q JA 460 ° C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
Device Package Shipping ?
NTJD4158CT1G SC ? 88 3000 Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2009
March, 2009 ? Rev. 2
1
Publication Order Number:
NTJD4158C/D
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相关代理商/技术参数 |
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| NTJD4401N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection |
| NTJD4401N_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection |
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| NTJD4401NT1 | 功能描述:MOSFET 20V Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTJD4401NT1G | 功能描述:MOSFET 20V Dual N-Channel ESD Protection RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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