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| 型号： | NTJD5121NT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DUAL 60V SOT-363 |
| 标准包装： | 1 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 295mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.6 欧姆 @ 500mA，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 0.9nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 26pF @ 20V |
| 功率 - 最大： | 250mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SC-88 |
| 包装： | 标准包装 |
| 其它名称： | NTJD5121NT1GOSDKR |
NTJD5121N
Power MOSFET
60 V, 295 mA, Dual N ? Channel with ESD
Protection, SC ? 88
Features
? Low R DS(on)
? Low Gate Threshold
? Low Input Capacitance
? ESD Protected Gate
? This is a Pb ? Free Device
Applications
? Low Side Load Switch
? DC ? DC Converters (Buck and Boost Circuits)
V (BR)DSS
60 V
http://onsemi.com
R DS(on) MAX
1.6 W @ 10 V
2.5 W @ 4.5 V
SC ? 88 (SOT ? 363)
I D Max
295 mA
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Symbol
Parameter
Value
Unit
S 1
1
6
D 1
Drain ? to ? Source Voltage
V DSS
60
V
G 1
2
5
G 2
Gate ? to ? Source Voltage
V GS
± 20
V
Continuous Drain
Current (Note 1)
Steady
State
T A = 25 ° C
T A = 85 ° C
I D
295
212
mA
D 2
3
4
S 2
t ≤ 5s
T A = 25 ° C
T A = 85 ° C
304
219
Top View
Power Dissipation
(Note 1)
Steady
State
T A = 25 ° C
P D
250
mW
MARKING DIAGRAM &
PIN ASSIGNMENT
Pulsed Drain Current
t ≤ 5s
t p = 10 m s
I DM
266
900
mA
1
6
D1 G2 S2
Operating Junction and Storage Temperature
Source Current (Body Diode)
T J , T STG
I S
? 55 to
150
210
° C
mA
SC ? 88/SOT ? 363
CASE 419B
STYLE 26
1
TF M G
G
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
Gate ? Source ESD Rating (HBM)
T L
ESD HBM
260
2000
° C
V
TF
M
G
S1 G1 D2
= Device Code
= Date Code
= Pb ? Free Package
Gate ? Source ESD Rating (MM)
ESD MM
200
V
(Note: Microdot may be in either location)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device Package Shipping ?
THERMAL RESISTANCE RATINGS
NTJD5121NT1G
SC ? 88
3000 / Tape & Reel
Parameter
Symbol
Value
Unit
(Pb ? Free)
Junction ? to ? Ambient – Steady State R q JA
Junction ? to ? Ambient – t ≤ 5 s R q JA
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [2 oz] including traces).
? Semiconductor Components Industries, LLC, 2013
October, 2013 ? Rev. 6
500
470
1
° C/W
NTJD5121NT2G SC ? 88 3000 / Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTJD5121N/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTJD5121NT2G | 功能描述:MOSFET NFET SC88D 60V 295mA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTJS3151P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Trench Power MOSFET 12 V, 3.3 A, Single P−Channel, ESD Protected SC−88 |
| NTJS3151PT1 | 功能描述:MOSFET 12V 3.3A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTJS3151PT1G | 功能描述:MOSFET 12V 3.3A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTJS3151PT2 | 功能描述:MOSFET 12V 3.3A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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