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| 型号： | NTJS4405NT4 |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 25V 1A SOT-363 |
| 产品变化通告： | Product Obsolescence 06/Oct/2006 |
| 标准包装： | 10,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 1A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 350 毫欧 @ 600mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 1.5nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 60pF @ 10V |
| 功率 - 最大： | 630mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SOT-363 |
| 包装： | 带卷 (TR) |
NTJS4405N, NVJS4405N
TYPICAL PERFORMANCE CURVES (T J = 25 ° C unless otherwise noted)
5
4.5
4
3.5
3
7V
6V
5.5 V
4.5 V
4V
3.5 V
V GS = 3 V
V GS = 2.5 V
2
1.5
V DS ≥ 5 V
T J = ? 55 ° C
T J = 125 ° C
2.5
1
2
1.5
1
0.5
0
0
0.5
1
1.5
2
2.5
3
3.5
V GS = 2 V
T J = 25 ° C
4 4.5
5
0.5
0
0
0.5
25 ° C
1
1.5
2
2.5
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 1. On ? Region Characteristics
V GS , GATE ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
1.0
V GS = 4.5 V
0.4
T J = 25 ° C
0.8
0.6
0.3
V GS = 2.7 V
0.4
T J = 125 ° C
T J = 25 ° C
0.2
V GS = 4.5 V
0.2
T J = ? 55 ° C
0
0
1.0
2.0
3.0
4.0
5.0
0.1
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
I D, DRAIN CURRENT (AMPS)
Figure 3. On ? Resistance vs. Drain Current and
Temperature
I D, DRAIN CURRENT (AMPS)
Figure 4. On ? Resistance vs. Drain Current and
Gate Voltage
1.8
1.6
I D = 0.6 A
V GS = 4.5 V
10000
V GS = 0 V
1000
1.4
T J = 150 ° C
1.2
100
1
0.8
10
T J = 125 ° C
0.6
? 50
? 25
0
25
50
75
100
125
150
1
0
5
10
15
20
25
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On ? Resistance Variation with
Temperature
http://onsemi.com
3
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 6. Drain ? to ? Source Leakage Current
vs. Voltage
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