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| 型号： | NTK3043NT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 210MA SOT-723 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 210mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.4 欧姆 @ 10mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.3V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 11pF @ 10V |
| 功率 - 最大： | 310mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-723 |
| 供应商设备封装： | SOT-723 |
| 包装： | 标准包装 |
| 其它名称： | NTK3043NT1GOSDKR |
NTK3043N
Power MOSFET
20 V, 285 mA, N ? Channel with ESD
Protection, SOT ? 723
Features
?
Enables High Density PCB Manufacturing
http://onsemi.com
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?
?
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44% Smaller Footprint than SC ? 89 and 38% Thinner than SC ? 89
Low Voltage Drive Makes this Device Ideal for Portable Equipment
Low Threshold Levels, V GS(TH) < 1.3 V
Low Profile (< 0.5 mm) Allows It to Fit Easily into Extremely Thin
Environments such as Portable Electronics
Operated at Standard Logic Level Gate Drive, Facilitating Future
Migration to Lower Levels Using the Same Basic Topology
These are Pb ? Free and Halogen Free Devices
V (BR)DSS
20 V
R DS(on) TYP
1.5 W @ 4.5 V
2.4 W @ 2.5 V
5.1 W @ 1.8 V
6.8 W @ 1.65 V
Top View
I D Max
285 mA
Applications
? Interfacing, Switching
? High Speed Switching
? Cellular Phones, PDAs
MAXIMUM RATINGS (T J = 25 ? C unless otherwise stated)
3
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
20
? 10
V
V
1
1 ? Gate
2
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
t v 5s
Steady
State
T A = 25 ? C
T A = 85 ? C
T A = 25 ? C
T A = 25 ? C
I D
P D
255
185
285
440
mA
mW
2 ? Source
3 ? Drain
MARKING
DIAGRAM
t v 5s
545
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
T A = 25 ? C
T A = 85 ? C
T A = 25 ? C
I D
P D
210
155
310
mA
mW
SOT ? 723
CASE 631AA
STYLE 5
1
KA
Pulsed Drain Current
t p = 10 m s
I DM
400
mA
KA
M
= Device Code
= Date Code
Operating Junction and Storage Temperature
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 seconds)
T J , T STG
I S
T L
? 55 to
150
286
260
? C
mA
? C
ORDERING INFORMATION
Device Package Shipping ?
NTK3043NT1G SOT ? 723* 4000 / Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces)
2. Surface ? mounted on FR4 board using the minimum recommended pad size.
NTK3043NT5G SOT ? 723* 8000 / Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*These packages are inherently Pb ? Free.
? Semiconductor Components Industries, LLC, 2013
January, 2013 ? Rev. 4
1
Publication Order Number:
NTK3043N/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTK3043NT1H | 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述: |
| NTK3043NT5G | 功能描述:MOSFET NFET 20V 285MA 3.4 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTK3134N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 20 V, 890 mA, Single N−Channel with ESD Protection, SOT−723 |
| NTK3134NT1G | 功能描述:MOSFET 20V/6V N CH T1 890mA 0.3 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTK3134NT1H | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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