参数资料
型号: NTLJS3113PT1G
厂商: ON Semiconductor
文件页数: 1/6页
文件大小: 0K
描述: MOSFET P-CH 20V 3.5A 6-WFDN
标准包装: 1
系列: µCool™
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 3.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 40 毫欧 @ 3A,4.5V
Id 时的 Vgs(th)(最大): 1V @ 250µA
闸电荷(Qg) @ Vgs: 15.7nC @ 4.5V
输入电容 (Ciss) @ Vds: 1329pF @ 16V
功率 - 最大: 700mW
安装类型: 表面贴装
封装/外壳: 6-WDFN 裸露焊盘
供应商设备封装: 6-WDFN(2x2)
包装: 标准包装
其它名称: NTLJS3113PT1GOSDKR
NTLJS3113P
Power MOSFET
? 20 V, ? 7.7 A, m Cool t Single P ? Channel,
2x2 mm, WDFN Package
50 m W @ ? 2.5 V
Features
? Recommended Replacement Device ? NTLUS3A40P
? WDFN Package Provides Exposed Drain Pad for Excellent Thermal
Conduction
? 2x2 mm Footprint Same as SC ? 88 Package
? Lowest R DS(on) Solution in 2x2 mm Package
? 1.5 V R DS(on) Rating for Operation at Low Voltage Logic Level Gate
Drive
? Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
? DC ? DC Converters (Buck and Boost Circuits)
? Optimized for Battery and Load Management Applications in
Portable Equipment such as, Cell Phones, PDA’s, Media Players, etc.
? High Side Load Switch
V (BR)DSS
? 20 V
http://onsemi.com
R DS(on) MAX I D MAX (Note 1)
40 m W @ ? 4.5 V
? 7.7 A
75 m W @ ? 1.8 V
200 m W @ ? 1.5 V
S
G
D
P ? CHANNEL MOSFET
Steady
State
T A = 85 ° C
T A = 25 ° C
DIAGRAM
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Parameter Symbol
Drain ? to ? Source Voltage V DSS
Gate ? to ? Source Voltage V GS
Continuous Drain T A = 25 ° C I D
Current (Note 1)
t ≤ 5s T A = 25 ° C
Power Dissipation Steady P D
(Note 1) State
t ≤ 5s
Value
? 20
± 8.0
? 5.8
? 4.4
? 7.7
1.9
3.3
Unit
V
V
A
W
S
Pin 1
MARKING
D
WDFN6 1 6
CASE 506AP 2 J8M G 5
3 G 4
J8 = Specific Device Code
M = Date Code
G = Pb ? Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
I D
P D
? 3.5
? 2.5
0.7
A
W
D
D
1
2
D
6
5
D
D
Pulsed Drain Current t p = 10 m s
Operating Junction and Storage Temperature
I DM
T J , T STG
? 23
? 55 to
150
A
° C
G
3
S
4
S
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
I S
T L
? 2.8
260
A
° C
(Top View)
ORDERING INFORMATION
3000/Tape & Reel
NTLJS3113PTAG
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size,
(30 mm 2 , 2 oz Cu).
Device Package Shipping ?
NTLJS3113PT1G WDFN6
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2011
March, 2011 ? Rev. 5
1
Publication Order Number:
NTLJS3113P/D
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