- 您现在的位置：买卖IC网 > PDF目录18000 > NTLUS3A18PZTAG (ON Semiconductor)MOSFET P-CH 20V 8.2A 6UDFN PDF资料下载
参数资料
| 型号： | NTLUS3A18PZTAG |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 8.2A 6UDFN |
| 标准包装： | 3,000 |
| 系列： | µCool™ |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 8.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 18 毫欧 @ 7A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 28nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 2240pF @ 15V |
| 功率 - 最大： | 700mW |
| 安装类型： | * |
| 封装/外壳： | * |
| 供应商设备封装： | * |
| 包装： | * |
NTLUS3A18PZ
Power MOSFET
? 20 V, ? 8.2 A, Single P ? Channel,
2.0x2.0x0.55 mm m Cool t UDFN Package
Features
? UDFN Package with Exposed Drain Pads for Excellent Thermal
Conduction
? Low Profile UDFN 2.0x2.0x0.55 mm for Board Space Saving
? Ultra Low R DS(on)
? ESD Diode ? Protected Gate
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
? Optimized for Power Management Applications for Portable
Products, such as Cell Phones, Media Tablets, PMP, DSC, GPS, and
Others
? Battery Switch
? High Side Load Switch
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
V (BR)DSS
? 20 V
G
http://onsemi.com
MOSFET
R DS(on) MAX
18 m W @ ? 4.5 V
25 m W @ ? 2.5 V
50 m W @ ? 1.8 V
90 m W @ ? 1.5 V
D
I D MAX
? 8.2 A
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Symbol
V DSS
V GS
Value
? 20
± 8.0
Unit
V
V
Continuous Drain
Current (Note 1)
Continuous Drain
Current (Note 1)
Steady
State
t ≤ 5s
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
I D
? 8.2
? 5.9
? 12.2
A
S
P ? Channel MOSFET
1
AC M G
CASE 517BG G
Power Dissipa- Steady
tion (Note 1) State
t ≤ 5s
Continuous Drain Steady
Current (Note 2) State
Power Dissipation (Note 2)
Pulsed Drain Current
Operating Junction and Storage
Temperature
T A = 25 ° C
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
tp = 10 m s
P D
I D
P D
I DM
T J ,
T STG
1.7
3.8
? 5.1
? 3.7
0.7
? 25
-55 to
150
W
A
W
A
° C
S MARKING DIAGRAM
D
UDFN6
( m COOL ] )
Pin 1
AC = Specific Device Code
M = Date Code
G = Pb ? Free Package
(*Note: Microdot may be in either location)
PIN CONNECTIONS
ESD (HBM, JESD22 ? A114)
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
V ESD
I S
T L
2000
? 1.7
260
V
A
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface-mounted on FR4 board using the minimum recommended pad size
of 30 mm 2 , 2 oz. Cu.
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
? Semiconductor Components Industries, LLC, 2012
July, 2012 ? Rev. 3
1
Publication Order Number:
NTLUS3A18PZ/D
相关PDF资料 |
PDF描述 |
|---|---|
| MMZ2012S800A | FERRITE CHIP 80 OHM 800MA 0805 |
| KSK-1C90F-2025 | REED SWITCH 175V 0.5A |
| MCM01-001D150J-F | CAP MICA 15PF 500V 5% SMD |
| WT227S1D1CQ | SWITCH TOGGLE DPDT 6A WSHBL |
| JB15LPF-BH | SWITCH TACTILE SPST-NO 0.05A 24V |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTLUS3A18PZTBG | 功能描述:MOSFET T4S PCH 20/8V IN 2X2 UDFN RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTLUS3A18PZTCG | 制造商:ON Semiconductor 功能描述:PFET UDFN 20V 8.2A 18MOHM - Tape and Reel 制造商:ON Semiconductor 功能描述:REEL / PFET UDFN 20V 8.2A 18MOHM |
| NTLUS3A39PZ | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:a??20 V, a??5.2 A, Single Pa??Channel, ESD, 1.6x1.6x0.55 mm UDFN Cool Package |
| NTLUS3A39PZTAG | 功能描述:MOSFET T4S PCH 20/8V IN 1.6X1.6 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTLUS3A39PZTBG | 功能描述:MOSFET T4S PCH 20/8V IN 1.6X1.6 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。