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| 型号： | NTMFS4833NST3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 16A SO-8FL |
| 标准包装： | 5,000 |
| 系列： | SENSEFET® |
| FET 型： | * |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 16A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2.2 毫欧 @ 30A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 86nC @ 11.5V |
| 输入电容 (Ciss) @ Vds： | 5250pF @ 12V |
| 功率 - 最大： | 900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PowerTDFN |
| 供应商设备封装： | SO-8FL |
| 包装： | 带卷 (TR) |
NTMFS4833NS
SENSEFET ) Power MOSFET
30 V, 156 A, Single N ? Channel, SO ? 8 FL
Features
? Accurate, Lossless Current Sensing
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
? CPU Power Delivery
? DC ? DC Converters
? Low Side Switching
V (BR)DSS
30 V
http://onsemi.com
R DS(ON) MAX
2.2 m W @ 10 V
3.4 m W @ 4.5 V
DRAIN
I D MAX
156 A
127 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter Symbol Value
Unit
GATE
Kelvin
Drain ? to ? Source Voltage
V DSS
30
V
SENSE SOURCE
SO ? 8 FLAT LEAD S
SENSE
S
KELVIN
Gate ? to ? Source Voltage
Continuous Drain
Current R q JA
(Note 1)
Power Dissipation
R q JA (Note 1)
Continuous Drain
Current R q JA
(Note 2) Steady
State
Power Dissipation
R q JA (Note 2)
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
V GS
I D
P D
I D
P D
± 20
26
18
2.31
16
11.6
0.9
V
A
W
A
W
CASE 506BQ
A = Assembly Location
Y = Year
1 S NC
G K1
MARKING
DIAGRAM
D (Do Not Connect)
4833NS
AYWZZ
D (Do Not Connect)
Continuous Drain
Current R q JC
(Note 1)
T C = 25 ° C
T C = 85 ° C
I D
156
113
A
W
ZZ
= Work Week
= Lot Traceability
Power Dissipation
R q JC (Note 1)
T C = 25 ° C
P D
86.2
W
ORDERING INFORMATION
Pulsed Drain
Current
T A = 25 ° C,
t p = 10 m s
I DM
312
A
Device
Package
Shipping ?
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source DV/DT
T J , T STG
I S
dV/dt
? 55 to
+150
86
6
° C
A
V/ns
NTMFS4833NST1G
NTMFS4833NST3G
SO ? 8 FL
(Pb ? Free)
SO ? 8 FL
(Pb ? Free)
1500 Tape / Reel
5000 Tape / Reel
Single Pulse Drain ? to ? Source Avalanche
Energy (T J = 25 ° C, V DD = 30 V, V GS = 10 V,
I L = 35 A pk , L = 1.0 mH, R G = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
EAS
T L
612.5
260
mJ
° C
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using 1 sq ? in pad, 1 oz Cu.
2. Surface ? mounted on FR4 board using the minimum recommended pad size.
? Semiconductor Components Industries, LLC, 2012
May, 2012 ? Rev. 1
1
Publication Order Number:
NTMFS4833NS/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTMFS4833NT1G | 功能描述:MOSFET NFET 30V 191A 2MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMFS4833NT1G | 制造商:ON Semiconductor 功能描述:N CHANNEL MOSFET 30V 191A DFN5 |
| NTMFS4833NT3G | 功能描述:MOSFET NFET 30V 191A 2MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMFS4834N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 130 A, Single N−Channel, SO−8FL |
| NTMFS4834NT1G | 功能描述:MOSFET NFET 30V 130A 3MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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