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| 型号： | NTMFS4845NT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 13.7A SO-8FL |
| 产品变化通告： | Product Obsolescence 07/Jul/2010 |
| 标准包装： | 5,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 13.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2.9 毫欧 @ 30A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 39nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 3720pF @ 12V |
| 功率 - 最大： | 890mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TDFN 裸露焊盘（5 引线） |
| 供应商设备封装： | 6-DFN，8-SO 扁平引线（5x6） |
| 包装： | 带卷 (TR) |
NTMFS4845N
Power MOSFET
30 V, 115 A, Single N ? Channel, SO ? 8FL
Features
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? Thermally Enhanced SO ? 8 Package
? These are Pb ? Free Devices
Applications
? Refer to Application Note AND8195/D
? CPU Power Delivery
? DC ? DC Converters
? Low Side Switching
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
V (BR)DSS
30 V
http://onsemi.com
R DS(ON) MAX
2.9 m W @ 10 V
4.4 m W @ 4.5 V
D (5,6)
I D MAX
115 A
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
30
± 16
V
V
G (4)
Continuous Drain
Current R q JA
(Note 1)
Power Dissipation
R q JA (Note 1)
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
I D
P D
22
15.8
2.27
A
W
S (1,2,3)
N ? CHANNEL MOSFET
S
4845N
S
AYWZZ
Continuous Drain
Current R q JA v
10 sec
Power Dissipation
R q JA, t v 10 sec
Continuous Drain
Current R q JA
(Note 2)
Power Dissipation
R q JA (Note 2)
Continuous Drain
Current R q JC
(Note 1)
Power Dissipation
R q JC (Note 1)
Pulsed Drain
Current
Steady
State
t p =10 m s
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T C = 25 ° C
T C = 85 ° C
T C = 25 ° C
T A = 25 ° C
I D
P D
I D
P D
I D
P D
I DM
35.5
25.6
5.95
13.7
9.9
0.89
115
83
62.5
230
A
W
A
W
A
W
A
MARKING
DIAGRAM
D
1
SO ? 8 FLAT LEAD S
CASE 488AA G
STYLE 1 D
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
D
D
Current limited by package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
T A = 25 ° C
I Dmaxpkg
T J ,
T STG
I S
dV/dt
100
? 55 to
+150
62
6
A
° C
A
V/ns
Device
NTMFS4845NT1G
NTMFS4845NT3G
Package
SO ? 8FL
(Pb ? Free)
SO ? 8FL
Shipping ?
1500 /
Tape & Reel
5000 /
Single Pulse Drain ? to ? Source Avalanche
Energy (V DD = 50 V, V GS = 10 V,
I L = 39 A pk , L = 0.3 mH, R G = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
EAS
T L
228
260
mJ
° C
(Pb ? Free) Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
? Semiconductor Components Industries, LLC, 2012
May, 2012 ? Rev. 3
1
Publication Order Number:
NTMFS4845N/D
相关PDF资料 |
PDF描述 |
|---|---|
| NTMFS4846NT3G | MOSFET N-CH 30V 12.7A SO-8FL |
| NTMFS4847NAT3G | MOSFET N-CH 30V 11.5A SO-8FL |
| NTMFS4849NT3G | MOSFET N-CH 30V 10.2A SO-8FL |
| NTMFS4851NT3G | MOSFET N-CH 30V 9.5A SO-8FL |
| NTMFS4852NT1G | MOSFET N-CH 30V 16A SO8 FL |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTMFS4846N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 100 A, Single N−Channel, SO−8 FL |
| NTMFS4846NT1G | 功能描述:MOSFET NFET SO8FL 30V TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMFS4846NT3G | 功能描述:MOSFET NFET SO8FL 30V TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMFS4847N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 85 A, Single N−Channel, SO−8 FL |
| NTMFS4847NAT1G | 功能描述:MOSFET NFET SO8FL 30V 85A 4.1mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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