参数资料
型号: NTMFS4846NT1G
厂商: ON Semiconductor
文件页数: 1/6页
文件大小: 0K
描述: MOSFET N-CH 30V 12.7A SO-8FL
标准包装: 1,500
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 12.7A
开态Rds(最大)@ Id, Vgs @ 25° C: 3.4 毫欧 @ 30A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 250µA
闸电荷(Qg) @ Vgs: 32nC @ 4.5V
输入电容 (Ciss) @ Vds: 3250pF @ 12V
功率 - 最大: 890mW
安装类型: 表面贴装
封装/外壳: 8-TDFN 裸露焊盘(5 引线)
供应商设备封装: 6-DFN,8-SO 扁平引线(5x6)
包装: 带卷 (TR)
其它名称: NTMFS4846NT1G-ND
NTMFS4846NT1GOSTR
NTMFS4846N
Power MOSFET
30 V, 100 A, Single N ? Channel, SO ? 8FL
Features
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? Thermally Enhanced SO8 Package
? These are Pb ? Free Devices
Applications
? Refer to Application Note AND8195/D
? CPU Power Delivery
? DC ? DC Converters
? Low Side Switching
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
V (BR)DSS
30 V
http://onsemi.com
R DS(ON) MAX
3.4 m W @ 10 V
5.1 m W @ 4.5 V
D (5,6)
I D MAX
100 A
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
30
± 20
V
V
G (4)
Continuous Drain
Current R q JA
(Note 1)
Power Dissipation
R q JA (Note 1)
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
I D
P D
20.3
14.6
2.25
A
W
S (1,2,3)
N ? CHANNEL MOSFET
S
S
Continuous Drain
Current R q JA v
10 sec
Power Dissipation
R q JA, t v 10 sec
Continuous Drain
Current R q JA
(Note 2)
Power Dissipation
R q JA (Note 2)
Continuous Drain
Current R q JC
(Note 1)
Power Dissipation
R q JC (Note 1)
Steady
State
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T C = 25 ° C
T C = 85 ° C
T C = 25 ° C
I D
P D
I D
P D
I D
P D
32.8
23.7
5.90
12.7
9.2
0.89
100
72
55.5
A
W
A
W
A
W
1
SO ? 8 FLAT LEAD S AYWZZ
CASE 488AA G
STYLE 1 D
A = Assembly Location
Y = Year
WW = Work Week
ZZ = Lot Traceability
MARKING
DIAGRAM
D
4846N
D
D
Pulsed Drain t p =10 m s
Current
Current limited by package
Operating Junction and Storage
Temperature
T A = 25 ° C
T A = 25 ° C
I DM
I Dmaxpkg
T J ,
T STG
200
100
? 55 to
+150
A
A
° C
ORDERING INFORMATION
Device Package Shipping ?
NTMFS4846NT1G SO ? 8FL 1500 /
Source Current (Body Diode)
I S
55
A
(Pb ? Free)
Tape & Reel
Drain to Source dV/dt
dV/dt
6
V/ns
NTMFS4846NT3G
SO ? 8FL
5000 /
Single Pulse Drain ? to ? Source Avalanche
Energy (V DD = 50 V, V GS = 10 V,
I L = 37 A pk , L = 0.3 mH, R G = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
EAS
T L
205
260
mJ
° C
(Pb ? Free) Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
? Semiconductor Components Industries, LLC, 2014
January, 2014 ? Rev. 6
1
Publication Order Number:
NTMFS4846N/D
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参数描述
NTMFS4846NT3G 功能描述:MOSFET NFET SO8FL 30V TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMFS4847N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 85 A, Single N−Channel, SO−8 FL
NTMFS4847NAT1G 功能描述:MOSFET NFET SO8FL 30V 85A 4.1mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMFS4847NAT3G 功能描述:MOSFET 30V N-CH TRENCH 2.6 S0-8FL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMFS4847NT1G 功能描述:MOSFET NFET SO8FL 30V TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube