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| 型号： | NTMFS4925NT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 9.7A SO-8FL |
| 标准包装： | 1,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 9.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5.6 毫欧 @ 30A，10V |
| Id 时的 Vgs(th)（最大）： | 2.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 21.5nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1264pF @ 15V |
| 功率 - 最大： | 920mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TDFN 裸露焊盘（5 引线） |
| 供应商设备封装： | 6-DFN，8-SO 扁平引线（5x6） |
| 包装： | 带卷 (TR) |
| 其它名称： | NTMFS4925NT1G-ND NTMFS4925NT1GOSTR |
NTMFS4925N
Power MOSFET
30 V, 48 A, Single N ? Channel, SO ? 8 FL
Features
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? Optimized for 5 V, 12 V Gate Drives
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
? CPU Power Delivery
? DC ? DC Converters
V (BR)DSS
30 V
http://onsemi.com
R DS(ON) MAX
5.6 m W @ 10 V
8.5 m W @ 4.5 V
D (5,6)
I D MAX
48 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
30
± 20
V
V
G (4)
Continuous Drain
Current R q JA
(Note 1)
Power Dissipation
R q JA (Note 1)
Continuous Drain
Current R q JA ≤ 10 s
(Note 1)
T A = 25 ° C
T A = 100 ° C
T A = 25 ° C
T A = 25 ° C
T A = 100 ° C
I D
P D
I D
16.7
10.5
2.70
25.2
15.9
A
W
A
S (1,2,3)
N ? CHANNEL MOSFET
MARKING
DIAGRAM
D
Power Dissipation
R q JA ≤ 10 s (Note 1)
Continuous Drain
Current R q JA
(Note 2)
Steady
State
T A = 25 ° C
T A = 25 ° C
T A = 100 ° C
P D
I D
6.16
9.7
6.2
W
A
1
SO ? 8 FLAT LEAD
CASE 488AA
STYLE 1
S
S
S
G
4925N
AYWZZ
D
D
D
Power Dissipation
R q JA (Note 2)
Continuous Drain
Current R q JC
(Note 1)
Power Dissipation
R q JC (Note 1)
T A = 25 ° C
T C = 25 ° C
T C =100 ° C
T C = 25 ° C
P D
I D
P D
0.92
48
30
23.2
W
A
W
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceability
Pulsed Drain
Current
T A = 25 ° C, t p = 10 m s,
V GS = 10 V
I DM
210
A
ORDERING INFORMATION
Current Limited by Package T A = 25 ° C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source DV/DT
Single Pulse Drain ? to ? Source Avalanche
Energy (T J = 25 ° C, V DD = 24 V, V GS = 20 V,
I L = 26 A pk , L = 0.1 mH, R G = 25 W )
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
I Dmax
T J ,
T STG
I S
dV/d t
E AS
T L
100
? 55 to
+150
21
6.0
34
260
A
° C
A
V/ns
mJ
° C
Device Package Shipping ?
NTMFS4925NT1G SO ? 8 FL 1500 /
(Pb ? Free) Tape & Reel
NTMFS4925NT3G SO ? 8 FL 5000 /
(Pb ? Free) Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using 1 sq ? in pad, 1 oz Cu.
2. Surface ? mounted on FR4 board using the minimum recommended pad size.
? Semiconductor Components Industries, LLC, 2012
August, 2012 ? Rev. 6
1
Publication Order Number:
NTMFS4925N/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTMFS4925NT3G | 功能描述:MOSFET TRENCH 3.1 30V 6 Ohm NCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMFS4926N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 44 A, Single Na??Channel, SOa??8 FL |
| NTMFS4926NET1G | 功能描述:MOSFET NFET S08FL 30V 44A 7MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMFS4926NT1G | 功能描述:MOSFET TRENCH 3.1 30V 7 Ohm NCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMFS4926NT3G | 功能描述:MOSFET TRENCH 3.1 30V 7 Ohm NCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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