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参数资料
| 型号： | NTMFS4933NT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 232A SO8 FL |
| 标准包装： | 5,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 20A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.2 毫欧 @ 30A，10V |
| Id 时的 Vgs(th)（最大）： | 2.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 62.1nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 10930pF @ 15V |
| 功率 - 最大： | 950mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TDFN 裸露焊盘（5 引线） |
| 供应商设备封装： | 6-DFN，8-SO 扁平引线（5x6） |
| 包装： | 带卷 (TR) |
NTMFS4933N
Power MOSFET
30 V, 210 A, Single N ? Channel, SO ? 8 FL
Features
? Low R DS(on) to Improve Conduction and Overall Efficiency
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
Applications
? OR ? ing FET, Power Load Switch, Motor Control
? Refer to Application Note AND8195/D for Mounting Information
End Products
? Server, UPS, Fault ? Tolerant Power Systems, Hot Swap
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
V (BR)DSS
30 V
R DS(ON) MAX
1.2 m W @ 10 V
2.0 m W @ 4.5 V
D (5,6)
I D MAX
210 A
Parameter
Drain ? to ? Source Voltage
Symbol
V DSS
Value
30
Unit
V
Gate ? to ? Source Voltage
V GS
± 20
V
G (4)
Continuous Drain
Current R q JA
(Note 1)
T A = 25 ° C
T A = 100 ° C
I D
34
21.5
A
S (1,2,3)
S
4933N
AYWZZ
S
G
D
Power Dissipation
R q JA (Note 1)
Continuous Drain
Current R q JA ≤ 10 s
(Note 1)
Power Dissipation
R q JA ≤ 10 s (Note 1)
Continuous Drain
Current R q JA
(Note 2)
Power Dissipation
R q JA (Note 2)
Continuous Drain
Current R q JC
(Note 1)
Power Dissipation
R q JC (Note 1)
Steady
State
T A = 25 ° C
T A = 25 ° C
T A = 100 ° C
T A = 25 ° C
T A = 25 ° C
T A = 100 ° C
T A = 25 ° C
T C = 25 ° C
T C =100 ° C
T C = 25 ° C
P D
I D
P D
I D
P D
I D
P D
2.74
43
27
7.3
20
12.5
1.06
210
132
104
W
A
W
A
W
A
W
N ? CHANNEL MOSFET
MARKING
DIAGRAM
D
S
1
SO ? 8 FLAT LEAD
CASE 488AA
STYLE 1
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
D
D
Pulsed Drain
Current
T A = 25 ° C, t p = 10 m s
I DM
400
A
ORDERING INFORMATION
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source DV/DT
T J ,
T STG
I S
dV/d t
? 55 to
+150
95
4.4
° C
A
V/ns
Device
NTMFS4933NT1G
Package
SO ? 8 FL
(Pb ? Free)
Shipping ?
1500 /
Tape & Reel
Single Pulse Drain ? to ? Source Avalanche E AS 504 mJ
Energy (T J = 25 ° C, V DD = 24 V, V GS = 10 V,
I L = 58 A pk , L = 0.3 mH, R G = 25 W )
Lead Temperature for Soldering Purposes T L 260 ° C
(1/8 ″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using 1 sq ? in pad, 1 oz Cu.
2. Surface ? mounted on FR4 board using the minimum recommended pad size.
(Cu area = 50 mm 2 [1 oz])
NTMFS4933NT3G SO ? 8 FL 5000 /
(Pb ? Free) Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2012
May, 2012 ? Rev. 8
1
Publication Order Number:
NTMFS4933N/D
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相关代理商/技术参数 |
参数描述 |
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| NTMFS4934N | 制造商:ON Semiconductor 功能描述:MOSFET N CH 30V 17.1A SO8 FL 制造商:ON Semiconductor 功能描述:MOSFET, N CH, 30V, 17.1A, SO8 FL 制造商:ON Semiconductor 功能描述:MOSFET, N CH, 30V, 17.1A, SO8 FL, Transistor Polarity:N Channel, Continuous Drain Current Id:147A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0022ohm, Rds(on) Test Voltage Vgs:4.5V, Threshold Voltage Vgs Typ:1.6V, Power , RoHS Compliant: Yes |
| NTMFS4934NT1G | 功能描述:MOSFET Power MOSFET 30V 147A 2m OHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMFS4934NT3G | 功能描述:MOSFET Power MOSFET 30V 147A 2m OHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMFS4935N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 93 A, Single N−Channel, SO−8 FL |
| NTMFS4935NBT1G | 功能描述:MOSFET NFET SO8FL 30V 93A 3.2 mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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