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| 型号： | NTMFS4935NT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 13A SO8 FL |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 13A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.2 毫欧 @ 30A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 49.4nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 4850pF @ 15V |
| 功率 - 最大： | 930mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TDFN 裸露焊盘（5 引线） |
| 供应商设备封装： | 6-DFN，8-SO 扁平引线（5x6） |
| 包装： | 标准包装 |
| 其它名称： | NTMFS4935NT1GOSDKR |
NTMFS4935N
Power MOSFET
30 V, 93 A, Single N ? Channel, SO ? 8 FL
Features
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
? CPU Power Delivery, DC ? DC Converters
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
V (BR)DSS
30 V
http://onsemi.com
R DS(ON) MAX
3.2 m W @ 10 V
4.2 m W @ 4.5 V
I D MAX
93 A
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
30
± 20
V
V
D (5,6)
Continuous Drain
Current R q JA
(Note 1)
Power Dissipation
R q JA (Note 1)
Continuous Drain
Current R q JA ≤
10 s (Note 1)
T A = 25 ° C
T A = 100 ° C
T A = 25 ° C
T A = 25 ° C
T A = 100 ° C
I D
P D
I D
21.8
13.8
2.63
40
25
A
W
A
G (4)
S (1,2,3)
N ? CHANNEL MOSFET
S
AYWZZ
S
G
Power Dissipation
R q JA ≤ 10 s
(Note 1)
Continuous Drain
Current R q JA
(Note 2)
Power Dissipation
R q JA (Note 2)
Continuous Drain
Current R q JC
(Note 1)
Power Dissipation
R q JC (Note 1)
Steady
State
T A = 25 ° C
T A = 25 ° C
T A = 100 ° C
T A = 25 ° C
T C = 25 ° C
T C = 85 ° C
T C = 25 ° C
P D
I D
P D
I D
P D
8.7
13
8.2
0.93
93
59
48
W
A
W
A
W
SO ? 8 FLAT LEAD
CASE 488AA
STYLE 1
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
1 S
MARKING
DIAGRAM
D
4935N
D
D
D
Pulsed Drain
Current
T A = 25 ° C, t p = 10 m s
I DM
275
A
Current Limited by Package
Operating Junction and Storage
Temperature
T A = 25 ° C
I Dmax
T J ,
T STG
100
? 55 to
+150
A
° C
ORDERING INFORMATION
Device Package Shipping ?
Source Current (Body Diode)
Drain to Source DV/DT
I S
dV/d t
44
6
A
V/ns
NTMFS4935NT1G
NTMFS4935NCT1G
SO ? 8 FL
(Pb ? Free)
1500 /
Tape & Reel
NTMFS4935NCT3G
Single Pulse Drain ? to ? Source Avalanche E AS 110 mJ
Energy T J = 25 ° C, V DD = 24 V, V GS = 10 V,
I L = 47 A pk , L = 0.1 mH, R G = 25 W
Lead Temperature for Soldering Purposes T L 260 ° C
(1/8 ″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using 1 sq ? in pad, 1 oz Cu.
2. Surface ? mounted on FR4 board using the minimum recommended pad size.
NTMFS4935NT3G SO ? 8 FL 5000 /
(Pb ? Free) Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2012
May, 2012 ? Rev. 10
1
Publication Order Number:
NTMFS4935N/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTMFS4935NT3G | 功能描述:MOSFET NFET SO8FL 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMFS4936N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 79 A, Single N−Channel, SO−8 FL |
| NTMFS4936NCT1G | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMFS4936NCT3G | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMFS4936NT1G | 功能描述:MOSFET NFET SO8FL 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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