- 您现在的位置：买卖IC网 > PDF目录18043 > NTMFS4936NT3G (ON Semiconductor)MOSFET N-CH 30V 11.6A SO8 FL PDF资料下载
参数资料
| 型号： | NTMFS4936NT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 11.6A SO8 FL |
| 标准包装： | 5,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 11.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4 毫欧 @ 30A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 43nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3044pF @ 15V |
| 功率 - 最大： | 920mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TDFN 裸露焊盘（5 引线） |
| 供应商设备封装： | 6-DFN，8-SO 扁平引线（5x6） |
| 包装： | 带卷 (TR) |
NTMFS4936N,
NTMFS4936NC
Power MOSFET
30 V, 79 A, Single N ? Channel, SO ? 8 FL
Features
? Low R DS(on) , Low Capacitance and Optimized Gate Charge to
Minimize Conduction, Driver and Switching Losses
? Next Generation Enhanced Body Diode, Engineered for Soft
Recovery, Provides Schottky ? Like Performance
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
? CPU Power Delivery
? DC ? DC Converters
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
V (BR)DSS
30 V
http://onsemi.com
R DS(ON) MAX
3.8 m W @ 10 V
4.8 m W @ 4.5 V
D (5,6)
I D MAX
79 A
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
30
± 20
V
V
G (4)
S
4936N
S
Continuous Drain
Current R q JA
(Note 1)
Power Dissipation
R q JA (Note 1)
Continuous Drain
Current R q JA ≤ 10 s
(Note 1)
Power Dissipation
R q JA ≤ 10 s (Note 1)
Continuous Drain
Current R q JA
(Note 2)
Power Dissipation
R q JA (Note 2)
Continuous Drain
Current R q JC
(Note 1)
Steady
State
T A = 25 ° C
T A = 100 ° C
T A = 25 ° C
T A = 25 ° C
T A = 100 ° C
T A = 25 ° C
T A = 25 ° C
T A = 100 ° C
T A = 25 ° C
T C = 25 ° C
T C =100 ° C
I D
P D
I D
P D
I D
P D
I D
19.5
12.3
2.62
35
22
8.4
11.6
7.3
0.92
79
50
A
W
A
W
A
W
A
S (1,2,3)
N ? CHANNEL MOSFET
MARKING
DIAGRAM
D
1
SO ? 8 FLAT LEAD S AYWZZ
CASE 488AA G
STYLE 1 D
4936N
= Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
D
D
Power Dissipation
R q JC (Note 1)
T C = 25 ° C
P D
43
W
Pulsed DrainCurrent T A = 25 ° C, t p = 10 m s
Current Limited by Package T A = 25 ° C
I DM
I Dmax
235
100
A
A
ORDERING INFORMATION
Operating Junction and Storage T J , ? 55 to ° C
Temperature T STG +150
Source Current (Body Diode) I S 39.2 A
Drain to Source DV/DT dV/d t 6.0 V/ns
Single Pulse Drain ? to ? Source Avalanche E AS 96.8 mJ
Energy (T J = 25 ° C, V DD = 50 V, V GS = 10 V,
I L = 44 A pk , L = 0.1 mH, R G = 25 W )
Lead Temperature for Soldering Purposes T L 260 ° C
(1/8 ″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using 1 sq ? in pad, 1 oz Cu.
2. Surface ? mounted on FR4 board using the minimum recommended pad size.
Device Package Shipping ?
NTMFS4936NT1G SO ? 8 FL 1500 /
(Pb ? Free) Tape & Reel
NTMFS4936NT3G SO ? 8 FL 5000 /
(Pb ? Free) Tape & Reel
NTMFS4936NCT1G SO ? 8 FL 1500 /
(Pb ? Free) Tape & Reel
NTMFS4936NCT3G SO ? 8 FL 5000 /
(Pb ? Free) Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2012
June, 2012 ? Rev. 9
1
Publication Order Number:
NTMFS4936N/D
相关PDF资料 |
PDF描述 |
|---|---|
| MS12ASG30 | SW SLIDE SPDT 0.4VA GOLD R/A PC |
| AS12BW | SW SLIDE SPDT FLUSH PCB |
| A121S1YCQ | SWITCH TOGGLE SPDT 6A PC MNT |
| AS12AW | SW SLIDE SPDT .098" PCB |
| NTD4806N-35G | MOSFET N-CH 30V 11A IPAK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTMFS4937N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 70 A, Single N−Channel, SO−8 FL |
| NTMFS4937NCT1G | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMFS4937NCT3G | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMFS4937NT1G | 功能描述:MOSFET NFET SO8FL 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMFS4937NT3G | 功能描述:MOSFET NFET SO8FL 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。