参数资料
型号: NTMFS4941NT1G
厂商: ON Semiconductor
文件页数: 1/7页
文件大小: 0K
描述: MOSFET N-CH 30V 9A SO8 FL
标准包装: 1,500
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 9A
开态Rds(最大)@ Id, Vgs @ 25° C: 6.2 毫欧 @ 30A,10V
Id 时的 Vgs(th)(最大): 2.2V @ 250µA
闸电荷(Qg) @ Vgs: 25.5nC @ 10V
输入电容 (Ciss) @ Vds: 1650pF @ 15V
功率 - 最大: 910mW
安装类型: 表面贴装
封装/外壳: 8-TDFN 裸露焊盘(5 引线)
供应商设备封装: 6-DFN,8-SO 扁平引线(5x6)
包装: 带卷 (TR)
其它名称: NTMFS4941NT1G-ND
NTMFS4941NT1GOSTR
NTMFS4941N
Power MOSFET
30 V, 47 A, Single N ? Channel, SO ? 8 FL
Features
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
? CPU Power Delivery
? DC ? DC Converters
V (BR)DSS
30 V
http://onsemi.com
R DS(ON) MAX
6.2 m W @ 10 V
9.0 m W @ 4.5 V
I D MAX
47 A
D (5,6)
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
30
± 20
V
V
G (4)
S
4941N
AYWZZ
S
G
D
Continuous Drain
Current R q JA
(Note 1)
Power Dissipation
R q JA (Note 1)
Continuous Drain
Current R q JA ≤
10 s (Note 1)
Power Dissipation
R q JA ≤ 10 s
(Note 1)
Continuous Drain
Current R q JA
(Note 2)
Power Dissipation
R q JA (Note 2)
Continuous Drain
Current R q JC
(Note 1)
Steady
State
T A = 25 ° C
T A = 100 ° C
T A = 25 ° C
T A = 25 ° C
T A = 100 ° C
T A = 25 ° C
T A = 25 ° C
T A = 100 ° C
T A = 25 ° C
T C = 25 ° C
T C =100 ° C
I D
P D
I D
P D
I D
P D
I D
15
9.4
2.56
25
16
7.2
9.0
5.7
0.91
47
30
A
W
A
W
A
W
A
S (1,2,3)
N ? CHANNEL MOSFET
MARKING
DIAGRAM
D
S
1
SO ? 8 FLAT LEAD
CASE 488AA
STYLE 1
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
D
D
Power Dissipation
R q JC (Note 1)
T C = 25 ° C
P D
25.5
W
Pulsed Drain Current
T A = 25 ° C, t p = 10 m s
I DM
140
A
ORDERING INFORMATION
Current Limited by Package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
T A = 25 ° C
I Dmax
T J ,
T STG
I S
100
? 55 to
+150
23
A
° C
A
Device
NTMFS4941NT1G
Package
SO ? 8 FL
(Pb ? Free)
Shipping ?
1500 /
Tape & Reel
Drain to Source DV/DT
Single Pulse Drain ? to ? Source Avalanche
Energy T J = 25 ° C, V DD = 50 V, V GS = 10 V,
I L = 29 A pk , L = 0.1 mH, R G = 25 W
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
dV/d t
E AS
T L
7.5
42
260
V/ns
mJ
° C
NTMFS4941NT3G SO ? 8 FL 5000 /
(Pb ? Free) Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using 1 sq ? in pad, 1 oz Cu.
2. Surface ? mounted on FR4 board using the minimum recommended pad size.
? Semiconductor Components Industries, LLC, 2012
June, 2012 ? Rev. 4
1
Publication Order Number:
NTMFS4941N/D
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