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| 型号： | NTMS4706NR2 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 6.4A 8-SOIC |
| 产品变化通告： | LTB Notification 03/Jan/2008 |
| 标准包装： | 2,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 12 毫欧 @ 10.3A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 950pF @ 24V |
| 功率 - 最大： | 830mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
NTMS4706N
Power MOSFET
30 V, 10.3 A, Single N?Channel, SO?8
Features
? Low R DS(on)
? Low Gate Charge
? Standard SO?8 Single Package
? Pb?Free Package is Available
http://onsemi.com
Applications
? Notebooks, Graphics Cards
? Synchronous Rectification
? High Side Switch
? DC?DC Converters
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
V (BR)DSS
30 V
R DS(ON) TYP
9.0 m W @ 10 V
11.4 m W @ 4.5 V
N?Channel
I D MAX
(Note 1)
10.3 A
Parameter
Drain?to?Source Voltage
Gate?to?Source Voltage
Symbol
V DSS
V GS
Value
30
± 20
Unit
V
V
D
Continuous Drain
Current (Note 1)
Steady
State
T A = 25 ° C
T A = 85 ° C
I D
8.6
6.2
A
G
t v 10 s
T A = 25 ° C
10.3
S
Power Dissipation
Steady
T A = 25 ° C
P D
1.5
W
(Note 1)
State
Continuous Drain
Current (Note 2)
t v 10 s
Steady
State
T A = 25 ° C
T A = 85 ° C
I D
2.2
6.4
4.6
A
MARKING DIAGRAM/
PIN ASSIGNMENT
1 8
Power Dissipation
(Note 2)
Pulsed Drain Current
T A = 25 ° C
t p = 10 m s
P D
I DM
0.83
31
W
A
1
SO?8
Source
Source
Source
Gate
Drain
Drain
Drain
Drain
Operating Junction and Storage Temperature
T J ,
T stg
?55 to
150
° C
CASE 751
STYLE 12
Top View
Source Current (Body Diode)
Single Pulse Drain?to?Source Avalanche Energy
(V DD = 25 V, V GS = 10 V, I L Peak = 7.5 A,
L = 10 mH, R G = 25 W )
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
I S
E AS
T L
2.1
150
260
A
mJ
° C
4706N = Device Code
A = Assembly Location
L = WaferLot
Y = Year
WW = Work Week
G = Pb?Free Package
THERMAL RESISTANCE MAXIMUM RATINGS
(Note: Microdot may be in either location)
Parameter
Symbol
Value
Unit
ORDERING INFORMATION
R q JA
Junction?to?Ambient – Steady State (Note 1) R q JA 83.5 ° C/W
Junction?to?Ambient – t v 10 s (Note 1) R q JA 58
Junction?to?Ambient – Steady State (Note 2) 150
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
Device
NTMS4706NR2
NTMS4706NR2G
Package
SO?8
SO?8
(Pb?Free)
Shipping ?
2500/Tape & Reel
2500/Tape & Reel
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
*For additional information on our Pb?Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
? Semiconductor Components Industries, LLC, 2005
November, 2005 ? Rev. 3
1
Publication Order Number:
NTMS4706N/D
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相关代理商/技术参数 |
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|---|---|
| NTMS4706NR2G | 功能描述:MOSFET 30V 10.3A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMS4800N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 8 A, N−Channel, SOIC−8 |
| NTMS4800NR2G | 功能描述:MOSFET 30V 8A 0.020OHM N-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMS4801N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 12 A, N−Channel, SO−8 |
| NTMS4801NR2G | 功能描述:MOSFET NFET SO8 30V 9.9A 12.5mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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