- 您现在的位置：买卖IC网 > Datasheet目录491 > NTMS4873NFR2G (ON Semiconductor)MOSFET N-CH SGL 30V 8-SOIC Datasheet资料下载
参数资料
| 型号： | NTMS4873NFR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH SGL 30V 8-SOIC |
| 产品变化通告： | Wire Change 12/May/2009 |
| 标准包装： | 2,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.1A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 12 毫欧 @ 10A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 16nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1900pF @ 15V |
| 功率 - 最大： | 870mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
NTMS4873NF
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
30
10
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V, V DS = 24 V
T J = 25 ° C
250
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 20 V
± 100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = 250 m A
1.45
6
2.5
V
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = 10 V, I D = 10 A
9
12
m W
V GS = 4.5 V, I D = 8.5 A
12
15
Forward Transconductance
g FS
V DS = 1.5 V, I D = 10 A
22
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C iss
1275
1900
pF
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V GS = 0 V, f = 1.0 MHz, V DS = 15 V
345
145
525
225
Total Gate Charge
Q G(TOT)
10.5
16
nC
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TH)
Q GS
Q GD
V GS = 4.5 V, V DS = 15 V, I D = 10 A
1.3
3.7
3.9
6.0
6.5
Total Gate Charge
Q G(TOT)
V GS = 10 V, V DS = 15 V, I D = 10 A
21.4
32
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn ? On Delay Time
t d(on)
9.8
16
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = 10 V, V DS = 15 V,
I D = 1.0 A, R G = 6.0 W
3.8
22.3
14.3
7.0
45
25
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
V SD
t RR
V GS = 0 V, I S = 3.5 A
T J = 25 ° C
T J = 125 ° C
0.55
0.5
20
0.7
35
V
ns
Charge Time
Discharge Time
t a
t b
V GS = 0 V, d IS /d t = 100 A/ m s,
I S = 10 A
9.5
10.6
15
20
Reverse Recovery Charge
Q RR
9.0
14
nC
PACKAGE PARASITIC VALUES
Source Inductance
L S
0.66
nH
Drain Inductance
Gate Inductance
L D
L G
T A = 25 ° C
0.20
1.5
nH
nH
Gate Resistance
R G
1.5
3.0
W
3. Pulse Test: pulse width = 300 m s, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
相关PDF资料 |
PDF描述 |
|---|---|
| NTMS4916NR2G | MOSFET N-CH 30V 11.4A SO8 FL |
| NTMS4917NR2G | MOSFET N-CH 30V 10.2A SO8 FL |
| NTMS4920NR2G | MOSFET N-CH 30V 10.6A 8SOIC |
| NTMS4935NR2G | MOSFET N-CH 30V 10A 8SOIC |
| NTMS4937NR2G | MOSFET N-CH 30V 8.6A 8SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTMS4916N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 11.6 A, N?Channel, SO?8 Low RDS(on) to Minimize Conduction Losses |
| NTMS4916NR2G | 功能描述:MOSFET NFET SO8 30V 11.4A 9MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMS4917N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 10.5 A, N?Channel, SO?8 Low RDS(on) to Minimize Conduction Losses |
| NTMS4917NR2G | 功能描述:MOSFET NFET SO8 30V 10.2A 11MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMS4920N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 17 A, N−Channel, SO−8 |
发布紧急采购，3分钟左右您将得到回复。