- 您现在的位置：买卖IC网 > PDF目录21691 > NTP2955G (ON Semiconductor)MOSFET P-CHAN 12A 60V TO220AB PDF资料下载
参数资料
| 型号： | NTP2955G |
| 厂商： | ON Semiconductor |
| 文件页数： | 5/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CHAN 12A 60V TO220AB |
| 产品目录绘图： | MOSFET TO-220, TO-220AB |
| 标准包装： | 50 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 196 毫欧 @ 12A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 14nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 700pF @ 25V |
| 功率 - 最大： | 2.4W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | NTP2955G-ND NTP2955GOS |
NTP2955
PACKAGE DIMENSIONS
TO ? 220
T SUFFIX
PLASTIC PACKAGE
CASE 221A ? 09
ISSUE AA
H
Q
Z
L
V
G
B
4
1 2 3
N
D
A
K
F
T
U
S
R
J
C
? T ?
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 ??? 1.15 ???
Z ??? 0.080 ??? 2.04
STYLE 5:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer
purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT :
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082 ? 1312 USA
Phone : 480 ? 829 ? 7710 or 800 ? 344 ? 3860 Toll Free USA/Canada
Fax : 480 ? 829 ? 7709 or 800 ? 344 ? 3867 Toll Free USA/Canada
Email : orderlit@onsemi.com
N. American Technical Support : 800 ? 282 ? 9855 Toll Free
USA/Canada
Japan : ON Semiconductor, Japan Customer Focus Center
2 ? 9 ? 1 Kamimeguro, Meguro ? ku, Tokyo, Japan 153 ? 0051
Phone : 81 ? 3 ? 5773 ? 3850
http://onsemi.com
5
ON Semiconductor Website : http://onsemi.com
Order Literature : http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
NTP2955/D
相关PDF资料 |
PDF描述 |
|---|---|
| MC12FA620G-F | CAP MICA 62PF 100V 2% 1210 |
| MC12FA560G-F | CAP MICA 56PF 100V 2% 1210 |
| MC12FA510G-F | CAP MICA 51PF 100V 2% 1210 |
| CD6CD110CO3 | CAP MICA 11PF 500V RADIAL |
| CD17FD431JO3F | CAP MICA 430PF 500V 5% RADIAL |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTP30N06 | 功能描述:MOSFET N-CH 60V 27A TO220AB RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| NTP30N06L | 功能描述:MOSFET NFET 60V 30A LL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTP30N06LG | 功能描述:MOSFET NFET 60V 30A LL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTP30N20 | 功能描述:MOSFET 200V 30A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTP30N20G | 功能描述:MOSFET 200V 30A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。