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| 型号： | NTP30N06L |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 30A TO220AB |
| 产品变化通告： | Product Obsolescence 19/Jun/2009 |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 30A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 46 毫欧 @ 15A，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 32nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 1150pF @ 25V |
| 功率 - 最大： | 88.2W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 其它名称： | NTP30N06LOS |
NTP30N06L, NTB30N06L
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain?to?Source Breakdown Voltage (Note 1)
(V GS = 0 Vdc, I D = 250 m Adc)
Temperature Coefficient (Positive)
V (BR)DSS
60
?
71.8
69
?
?
Vdc
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
m Adc
(V DS = 60 Vdc, V GS = 0 Vdc)
(V DS = 60 Vdc, V GS = 0 Vdc, T J = 150 ° C)
?
?
?
?
1.0
10
Gate?Body Leakage Current (V GS = ± 15 Vdc, V DS = 0 Vdc)
I GSS
?
?
± 100
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage (Note 1)
(V DS = V GS , I D = 250 m Adc)
Threshold Temperature Coefficient (Negative)
V GS(th)
1.0
?
1.7
4.8
2.0
?
Vdc
mV/ ° C
Static Drain?to?Source On?Resistance (Note 1)
R DS(on)
m W
(V GS = 5.0 Vdc, I D = 15 Adc)
Static Drain?to?Source On?Voltage (Note 1)
(V GS = 5.0 Vdc, I D = 30 Adc)
(V GS = 5.0 Vdc, I D = 15 Adc, T J = 150 ° C)
V DS(on)
?
?
?
38
1.3
1.06
46
1.7
?
Vdc
Forward Transconductance (Note 1) (V DS = 7.0 Vdc, I D = 15 Adc)
g FS
?
21
?
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
810
1150
pF
Output Capacitance
Transfer Capacitance
(V DS = 25 Vdc, V GS = 0 Vdc,
f = 1.0 MHz)
C oss
C rss
?
?
260
80
370
115
SWITCHING CHARACTERISTICS (Note 2)
Turn?On Delay Time
t d(on)
?
10
20
ns
Rise Time
Turn?Off Delay Time
Fall Time
(V DD = 30 Vdc, I D = 30 Adc,
V GS = 5.0 Vdc, R G = 9.1 W ) (Note 1)
t r
t d(off)
t f
?
?
?
200
15.6
62
400
30
120
Gate Charge
(V DS = 48 Vdc, I D = 30 Adc,
V GS = 5.0 Vdc) (Note 1)
Q T
Q 1
Q 2
?
?
?
16
3.9
10
32
?
?
nC
SOURCE?DRAIN DIODE CHARACTERISTICS
Forward On?Voltage
Reverse Recovery Time
(I S = 30 Adc, V GS = 0 Vdc) (Note 1)
(I S = 30 Adc, V GS = 0 Vdc, T J = 150 ° C)
(I S = 30 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ m s) (Note 1)
V SD
t rr
t a
?
?
?
?
1.01
1.03
50
32
1.2
?
?
?
Vdc
ns
t b
?
17
?
Reverse Recovery Stored Charge
Q RR
?
0.082
?
m C
1. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperatures.
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