- 您现在的位置：买卖IC网 > PDF目录17993 > NTP6411ANG (ON Semiconductor)MOSFET N-CH 100V 72A TO-220AB PDF资料下载
参数资料
| 型号： | NTP6411ANG |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 72A TO-220AB |
| 产品目录绘图： | MOSFET TO-220, TO-220AB |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 72A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 14 毫欧 @ 72A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 100nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3700pF @ 25V |
| 功率 - 最大： | 188W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 其它名称： | NTP6411ANG-ND NTP6411ANGOS |
NTB6411AN, NTP6411AN,
NVB6411AN
N-Channel Power MOSFET
100 V, 77 A, 14 m W
Features
? Low R DS(on)
? High Current Capability
? 100% Avalanche Tested
? NVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC ? Q101
Qualified and PPAP Capable
? These Devices are Pb ? Free and are RoHS Compliant
MAXIMUM RATINGS (T J = 25 ° C Unless otherwise specified)
V (BR)DSS
100 V
http://onsemi.com
R DS(ON) MAX
14 m W @ 10 V
N ? Channel
D
I D MAX
(Note 1)
77 A
Parameter
Drain ? to ? Source Voltage
Symbol
V DSS
Value
100
Unit
V
Gate ? to ? Source Voltage ? Continuous
V GS
$ 20
V
G
Continuous Drain
Current R q JC
Steady
State
T C = 25 ° C
T C = 100 ° C
I D
77
54
A
S
Power Dissipation
R q JC
Pulsed Drain Current
Steady T C = 25 ° C
State
t p = 10 m s
P D
I DM
217
285
W
A
4
4
Operating Junction and Storage Temperature
Range
Source Current (Body Diode)
T J , T stg
I S
? 55 to
+175
77
° C
A
TO ? 220AB
1
2
3
D 2 PAK
Single Pulse Drain ? to ? Source Avalanche
Energy (V DD = 50 Vdc, V GS = 10 Vdc, I L(pk) =
56 A, L = 0.3 mH, R G = 25 W )
E AS
470
mJ
1
2
3
CASE 221A
STYLE 5
CASE 418B
STYLE 2
Lead Temperature for Soldering
Purposes, 1/8 ″ from Case for 10 Seconds
THERMAL RESISTANCE RATINGS
Parameter
Junction ? to ? Case (Drain) Steady State
T L
Symbol
R q JC
260
Max
0.69
° C
Unit
° C/W
4
Drain
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
Junction ? to ? Ambient (Note 1) R q JA 33
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
1
Gate
NTP
6411ANG
AYWW
3
Source
1
Gate
NTB
6411ANG
AYWW
2
Drain
3
Source
2
Drain
6411AN = Specific Device Code
G = Pb ? Free Device
A = Assembly Location
Y = Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
? Semiconductor Components Industries, LLC, 2012
January, 2012 ? Rev. 2
1
Publication Order Number:
NTB6411AN/D
相关PDF资料 |
PDF描述 |
|---|---|
| D6C00 F1 LFS | SWITCH PUSH SPST-NO 0.1A 32V |
| PBF620012 | OSC 156.25MHZ 3.3V SMD |
| MCM01-001D290J-F | CAP MICA 29PF 500V 5% SMD |
| CCPD-033-50-125.000 | OSC LVPECL 125.0 MHZ 3.3V SMD |
| PBF550007 | OSC 155.52MHZ 3.3V SMD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTP6412AN | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET 100 V, 58 A, 18.2 mΩ |
| NTP6412ANG | 功能描述:MOSFET NFET TO220 100V 72A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTP6413AN | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET 100 V, 42 A, 28 m |
| NTP6413ANG | 功能描述:MOSFET NFET TO220 100V 42A 28MOH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTP6448ANG | 功能描述:MOSFET NFET TO220 100V 80A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。