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| 型号： | NTP6413ANG |
| 厂商： | ON Semiconductor |
| 文件页数： | 7/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 42A TO-220AB |
| 产品目录绘图： | MOSFET TO-220, TO-220AB |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 42A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 28 毫欧 @ 42A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 51nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1800pF @ 25V |
| 功率 - 最大： | 136W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 其它名称： | NTP6413ANG-ND NTP6413ANGOS |
NTB6413AN, NTP6413AN, NVB6413AN
PACKAGE DIMENSIONS
TO ? 220
CASE 221A ? 09
ISSUE AG
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
B
F
T
S
C
? T ?
SEATING
PLANE
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
4
DIM
INCHES
MIN MAX
MILLIMETERS
MIN MAX
Q
A
A
B
C
0.570 0.620
0.380 0.405
0.160 0.190
14.48 15.75
9.66 10.28
4.07 4.82
H
Z
1 2 3
K
U
D
F
G
H
J
K
0.025 0.036
0.142 0.161
0.095 0.105
0.110 0.161
0.014 0.025
0.500 0.562
0.64 0.91
3.61 4.09
2.42 2.66
2.80 4.10
0.36 0.64
12.70 14.27
L
0.045 0.060
1.15 1.52
L
V
G
R
J
N
Q
R
S
T
U
0.190 0.210
0.100 0.120
0.080 0.110
0.045 0.055
0.235 0.255
0.000 0.050
4.83 5.33
2.54 3.04
2.04 2.79
1.15 1.39
5.97 6.47
0.00 1.27
N
D
V 0.045 ---
Z --- 0.080
STYLE 5:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
1.15 ---
--- 2.04
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NTB6413AN/D
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