参数资料
型号: NTP75N03R
厂商: ON Semiconductor
文件页数: 2/8页
文件大小: 0K
描述: MOSFET N-CH 25V 9.7A TO220AB
产品变化通告: Discontinuation 30/Jun/2006
标准包装: 50
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 25V
电流 - 连续漏极(Id) @ 25° C: 9.7A
开态Rds(最大)@ Id, Vgs @ 25° C: 8 毫欧 @ 20A,10V
Id 时的 Vgs(th)(最大): 2V @ 250µA
闸电荷(Qg) @ Vgs: 13.2nC @ 5V
输入电容 (Ciss) @ Vds: 1333pF @ 20V
功率 - 最大: 1.25W
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 管件
其它名称: NTP75N03ROS
NTB75N03R, NTP75N03R
ELECTRICAL CHARACTERISTICS (T J = 25 ° C Unless otherwise specified)
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain?to?Source Breakdown Voltage (Note 3)
(V GS = 0 V dc , I D = 250 m A dc )
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V DS = 20 V dc , V GS = 0 V dc )
(V DS = 20 V dc , V GS = 0 V dc , T J = 150 ° C)
Gate?Body Leakage Current
(V GS = ± 20 V dc , V DS = 0 V dc )
V (br)DSS
I DSS
I GSS
25
?
?
?
?
28
20.5
?
?
?
?
?
1.0
10
± 100
V dc
mV/ ° C
m A dc
nA dc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(V DS = V GS , I D = 250 m A dc )
Threshold Temperature Coefficient (Negative)
V GS(th)
1.0
?
1.5
4.0
2.0
?
V dc
mV/ ° C
Static Drain?to?Source On?Resistance (Note 3)
R DS(on)
m W
(V GS = 4.5 V dc , I D = 20 A dc )
(V GS = 10 V dc , I D = 20 A dc )
Forward Transconductance (Note 3)
(V DS = 10 V dc , I D = 15 A dc )
g FS
?
?
?
8.1
5.6
27
13
8.0
?
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
1333
?
pF
Output Capacitance
Transfer Capacitance
(V DS = 20 V dc , V GS = 0 V,
f = 1 MHz)
C oss
C rss
?
?
600
218
?
?
SWITCHING CHARACTERISTICS (Note 4)
Turn?On Delay Time
t d(on)
?
6.9
?
ns
Rise Time
Turn?Off Delay Time
Fall Time
(V GS = 10 V dc , V DD = 10 V dc ,
I D = 30 A dc , R G = 3 W )
t r
t d(off)
t f
?
?
?
1.3
18.4
5.5
?
?
?
Gate Charge
(V GS = 5 V dc , I D = 30 A dc ,
V DS = 10 V dc ) (Note 3)
Q T
Q 1
Q 2
?
?
?
13.2
3.3
6.2
?
?
?
nC
SOURCE?DRAIN DIODE CHARACTERISTICS
Forward On?Voltage
V SD
V dc
(I S = 20 A dc , V GS = 0 V dc ) (Note 3)
(I S = 20 A dc , V GS = 0 V dc , T J = 125 ° C)
?
?
0.86
0.73
1.2
?
Reverse Recovery Time
Reverse Recovery Stored Charge
(I S = 35 A dc , V GS = 0 V dc ,
dI S /dt = 100 A/ m s) (Note 3)
t rr
t a
t b
Q RR
?
?
?
?
15.6
13.8
1.78
0.004
?
?
?
?
ns
m C
3. Pulse Test: Pulse Width = 300 m s, Duty Cycle = 2%.
4. Switching characteristics are independent of operating junction temperatures.
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