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| 型号： | NTP85N03G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 28V 85A TO-220AB |
| 产品变化通告： | Product Obsolescence 13/Apr/2009 |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 28V |
| 电流 - 连续漏极(Id) @ 25° C： | 85A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 6.8 毫欧 @ 40A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 29nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 2150pF @ 24V |
| 功率 - 最大： | 80W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
NTP85N03, NTB85N03
Power MOSFET
85 Amps, 28 Volts
N?Channel TO?220 and D 2 PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
? Pb?Free Packages are Available
Typical Applications
http://onsemi.com
85 AMPERES, 28 VOLTS
R DS(on) = 6.1 m W (Typ)
N?Channel
D
?
?
?
?
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
G
S
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
4
Rating
Symbol
Value
Unit
Drain?to?Source Voltage
Gate?to?Source Voltage ? Continuous
V DSS
V GS
28
" 20
Vdc
Vdc
4
Drain Current
? Continuous @ T C = 25 ° C
? Single Pulse (t p = 10 m s)
Total Power Dissipation @ T C = 25 ° C
Derate above 25 ° C
I D
I DM
P D
85*
190
80
0.66
Adc
Apk
W
W/ ° C
1
2
3
TO?220AB
CASE 221A
STYLE 5
1
2
3
D 2 PAK
CASE 418AA
STYLE 2
Operating and Storage Temperature Range
T J , T stg
?55 to
+150
° C
MARKING DIAGRAMS
& PIN ASSIGNMENTS
Single Pulse Drain?to?Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 28 Vdc, V GS = 10 Vdc, L = 5.0 mH,
I L(pk) = 17 A, RG = 25 W )
Thermal Resistance,
? Junction?to?Case
? Junction?to?Ambient (Note 1)
Maximum Lead Temperature for Soldering
E AS
R q JC
R q JA
T L
733
1.55
70
260
mJ
° C/W
° C
4
Drain
NTx85N03G
AYWW
4
Drain
NTx
85N03G
AYWW
Purposes, 1/8 in from case for 10 seconds
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
1
Gate
3
Source
1
Gate
2
Drain
3
Source
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
2
Drain
*Chip current capability limited by package.
1. When surface mounted to an FR4 board using 1 in pad size, (Cu Area 1.127 in 2 ).
NTx85N03
x
A
Y
WW
G
= Device Code
= B or P
= Assembly Location
= Year
= Work Week
= Pb?Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
? Semiconductor Components Industries, LLC, 2005
August, 2005 ? Rev. 2
1
Publication Order Number:
NTP85N03/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTP85N03RG | 功能描述:MOSFET N-CH 28V 85A TO220AB RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| NTP85N08/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:80 V Power MOSFET |
| NTP8N50/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET 8 Amps， 500 Volts |
| NTP90N02 | 功能描述:MOSFET 24V 90A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTP90N02G | 功能描述:MOSFET 24V 90A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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