参数资料
型号: NTP90N02
厂商: ON Semiconductor
文件页数: 4/8页
文件大小: 0K
描述: MOSFET N-CH 24V 90A TO220AB
产品变化通告: Discontinuation 30/Jun/2006
标准包装: 50
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 24V
电流 - 连续漏极(Id) @ 25° C: 90A
开态Rds(最大)@ Id, Vgs @ 25° C: 5.8 毫欧 @ 90A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 29nC @ 4.5V
输入电容 (Ciss) @ Vds: 2120pF @ 20V
功率 - 最大: 85W
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 管件
其它名称: NTP90N02OS
NTB90N02, NTP90N02
5000
V GS = 0 V
10
28
4000
T J = 25 ° C
8
Q T
24
3000
6
V D
V GS
20
C iss
16
2000
4
Q 1
Q 2
12
C oss
8
1000
C rss
0
?8 ?6 ?4 ?2 0 2 4 6 8 10 12 14 16 18 20 22 24
V GS V DS
GATE?TO?SOURCE OR DRAIN?TO?SOURCE VOLTAGE (V)
2
0
0
10
I D = 1.0 A
T J = 25 ° C
20 30 40
Q g , TOTAL GATE CHARGE (nC)
50
4
0
1000
Figure 7. Capacitance Variation
Figure 8. Gate?to?Source and
Drain?to?Source Voltage versus Total Charge
90
V DD = 20 V
I D = 20 A
V GS = 10 V
80
70
V GS = 0 V
T J = 25 ° C
100
10
t r
t f
t d(off)
t d(on)
60
50
40
30
20
10
1
1
10
100
0
0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00
R G , GATE RESISTANCE ( W )
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
ORDERING INFORMATION
V SD , SOURCE?TO?DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage versus
Current
NTP90N02
NTP90N02G
NTB90N02
NTB90N02G
NTB90N02T4
NTB90N02T4G
Device
Package
TO?220AB
TO?220AB
(Pb?Free)
D 2 PAK
D 2 PAK
(Pb?Free)
D 2 PAK
D 2 PAK
Shipping ?
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
800 Tape & Reel
800 Tape & Reel
(Pb?Free)
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
4
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