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参数资料
| 型号： | NTR1P02LT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 1.3A SOT-23 |
| 产品变化通告： | Wire Change for SOT23 Pkg 26/May/2009 |
| 产品目录绘图： | MOSFET SOT-23-3 Pkg |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 220 毫欧 @ 750mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.25V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 5.5nC @ 4V |
| 输入电容 (Ciss) @ Vds： | 225pF @ 5V |
| 功率 - 最大： | 400mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 标准包装 |
| 其它名称： | NTR1P02LT1GOSDKR |
NTR1P02L, NVTR01P02L
Power MOSFET
? 20 V, ? 1.3 A, P ? Channel
SOT ? 23 Package
These miniature surface mount MOSFETs low R DS(on) assure
minimal power loss and conserve energy, making these devices ideal
http://onsemi.com
for use in space sensitive power management circuitry. Typical
applications are DC ? DC converters and power management in
portable and battery ? powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
Features
? Low R DS(on) Provides Higher Efficiency and Extends Battery Life
? Miniature SOT ? 23 Surface Mount Package Saves Board Space
? NVTR Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC ? Q101
Qualified and PPAP Capable
? Pb ? Free and Halide ? Free Packages are Available
V (BR)DSS
? 20 V
G
R DS(on) Max
220 m W @ ? 4.5 V
P ? Channel
D
I D Max
? 1.3 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating Symbol
Drain ? to ? Source Voltage V DSS
Gate ? to ? Source Voltage ? Continuous V GS
Value
? 20
± 12
Unit
V
V
1
3
S
MARKING DIAGRAM &
PIN ASSIGNMENT
Drain
3
P02 M G
G
1 2
Gate
Source
Drain Current
? Continuous @ T A = 25 ° C
? Pulsed Drain Current (t p ≤ 10 m s)
Total Power Dissipation @ T A = 25 ° C
Operating and Storage Temperature Range
I D
I DM
P D
T J , T stg
? 1.3
? 4.0
400
? 55 to
150
A
A
mW
° C
2
SOT ? 23
CASE 318
STYLE 21
P02 = Specific Device Code
Thermal Resistance ? Junction ? to ? Ambient R q JA 300 ° C/W
Maximum Lead Temperature for Soldering T L 260 ° C
Purposes, (1/8 ″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
M = Date Code*
G = Pb ? Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device Package Shipping ?
NTR1P02LT1G
NTR1P02LT3G
NVTR01P02LT1G
SOT ? 23
(Pb ? Free)
SOT ? 23
(Pb ? Free)
SOT ? 23
3000 Tape & Reel
10,000 Tape &
Reel
3000 Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2012
October, 2012 ? Rev. 13
1
Publication Order Number:
NTR1P02LT1/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTR1P02LT1G-CUT TAPE | 制造商:ON 功能描述:NTR Series P-Channel 20 V 220 mOhm 440 mW Surface Mount Power MOSFET - SOT-23 |
| NTR1P02LT1H | 制造商:ON Semiconductor 功能描述:PFET SOT23 20V 1.3A 0.222 |
| NTR1P02LT3 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -20 V, -1.3 A, P-Channel SOT-23 Package |
| NTR1P02LT3G | 功能描述:MOSFET PFET SOT23 20V .160R RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTR1P02T1 | 功能描述:MOSFET -20V -1A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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