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参数资料
| 型号： | NTR1P02T3 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 1A SOT-23 |
| 产品变化通告： | Product Discontinuation 20/Aug/2008 Wire Change for SOT23 Pkg 26/May/2009 |
| 产品目录绘图： | MOSFET SOT-23-3 Pkg |
| 标准包装： | 10,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 1A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 180 毫欧 @ 1.5A，10V |
| Id 时的 Vgs(th)（最大）： | 2.3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 2.5nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 165pF @ 5V |
| 功率 - 最大： | 400mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 带卷 (TR) |
NTR1P02, NVR1P02
Power MOSFET
? 20 V, ? 1 A, P ? Channel SOT ? 23 Package
Features
? Ultra Low On ? Resistance Provides Higher Efficiency
and Extends Battery Life
R DS(on) = 0.180 W , V GS = ? 10 V
R DS(on) = 0.280 W , V GS = ? 4.5 V
? Power Management in Portable and Battery ? Powered Products
? Miniature SOT ? 23 Surface Mount Package Saves Board Space
? Mounting Information for SOT ? 23 Package Provided
? NVR Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC ? Q101
Qualified and PPAP Capable*
?
These Devices are Pb ? Free and are RoHS Compliant
V (BR)DSS
? 20 V
http://onsemi.com
R DS(on) TYP
148 m W @ ? 10 V
P ? Channel
D
I D MAX
? 1.0 A
Applications
? DC ? DC Converters
? Computers
? Printers
? PCMCIA Cards
? Cellular and Cordless Telephones
G
S
MARKING DIAGRAM/
PIN ASSIGNMENT
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating Symbol
Drain ? to ? Source Voltage V DSS
Gate ? to ? Source Voltage ? Continuous V GS
Drain Current
? Continuous @ T A = 25 ° C I D
? Pulsed Drain Current (t p ≤ 1 m s) I DM
Total Power Dissipation @ T A = 25 ° C
P D
Value
? 20
± 20
? 1.0
? 2.67
400
Unit
V
V
A
mW
1
2
SOT ? 23
CASE 318
STYLE 21
3
3
Drain
P2 G
G
1 2
Gate Source
Operating and Storage Temperature Range
Thermal Resistance; Junction ? to ? Ambient
Maximum Lead Temperature for Soldering
Purposes, (1/8 ″ from case for 10 s)
T J , T stg
R q JA
T L
? 55 to
150
300
260
° C
° C/W
° C
P2 = Specific Device Code
M = Date Code
G = Pb ? Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Device
NTR1P02T1G
Package
SOT ? 23
Shipping ?
3000 / Tape & Reel
(Pb ? Free)
NTR1P02T3G
NVR1P02T1G*
SOT ? 23
(Pb ? Free)
SOT ? 23
10000 / Tape & Reel
3000 / Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2013
August, 2013 ? Rev. 7
1
Publication Order Number:
NTR1P02T1/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTR1P02T3G | 功能描述:MOSFET -20V -1A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTR2 | 制造商:RADIOMETRIX 制造商全称:RADIOMETRIX 功能描述:UHF Narrow Band FM Transceiver |
| NTR2101P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET |
| NTR2101PT1 | 功能描述:MOSFET -8V 3.7A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTR2101PT1G | 功能描述:MOSFET -8V 3.7A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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