参数资料
型号: NTR4502PT1
厂商: ON Semiconductor
文件页数: 1/5页
文件大小: 0K
描述: MOSFET P-CH 30V 1.13A SOT-23
产品变化通告: LTB Notification 03/Jan/2008
Wire Change for SOT23 Pkg 26/May/2009
标准包装: 3,000
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 1.13A
开态Rds(最大)@ Id, Vgs @ 25° C: 200 毫欧 @ 1.95A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 10nC @ 10V
输入电容 (Ciss) @ Vds: 200pF @ 15V
功率 - 最大: 400mW
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: SOT-23-3(TO-236)
包装: 带卷 (TR)
NTR4502P, NVTR4502P
Power MOSFET
? 30 V, ? 1.95 A, Single, P ? Channel,
SOT ? 23
Features
? Leading Planar Technology for Low Gate Charge / Fast Switching
? Low R DS(ON) for Low Conduction Losses
? SOT ? 23 Surface Mount for Small Footprint (3 X 3 mm)
? AEC Q101 Qualified ? NVTR4502P
? These Devices are Pb ? Free and are RoHS Compliant
Applications
? DC to DC Conversion
? Load/Power Switch for Portables and Computing
? Motherboard, Notebooks, Camcorders, Digital Camera’s, etc.
? Battery Charging Circuits
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
V (BR)DSS
? 30 V
G
http://onsemi.com
R DS(on) TYP I D Max (Note 1)
155 m W @ ? 10 V
? 1.95 A
240 m W @ ? 4.5 V
P ? Channel MOSFET
S
Parameter
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
Symbol
V DSS
V GS
Value
? 30
± 20
Unit
V
V
D
MARKING DIAGRAM/
PIN ASSIGNMENT
Drain Current (Note 1)
Power Dissipation
(Note 1)
Continuous Drain Current
(Note 1)
Power Dissipation
(Note 1)
t < 10 s T A = 25 ° C
T A = 70 ° C
t < 10 s
Steady T A = 25 ° C
State
T A = 70 ° C
Steady State
I D
P D
I D
P D
? 1.95
? 1.56
1.25
? 1.13
? 0.90
0.4
A
W
A
W
SOT ? 23
CASE 318
STYLE 21
TR2
M
G
Drain
3
TR2 M G
G
Gate Source
= Device Code
= Date Code*
= Pb ? Free Package
1 2
Pulsed Drain Current
t p = 10 m s
I DM
? 6.8
A
(Note: Microdot may be in either location)
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8 in from case for 10 s)
T J ,
T STG
I S
T L
? 55 to
150
? 1.25
260
° C
A
° C
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device Package Shipping ?
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
NTR4502PT1G
SOT ? 23
(Pb ? Free)
3000 / Tape & Reel
Junction ? to ? Ambient – Steady State (Note 1) R q JA 300 ° C/W
Junction ? to ? Ambient – t = 10 s (Note 1) R q JA 100
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [1 oz] including traces).
NVTR4502PT1G SOT ? 23 3000 / Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2011
August, 2011 ? Rev. 5
1
Publication Order Number:
NTR4502P/D
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