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参数资料
| 型号： | NTR4502PT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 1.13A SOT-23 |
| 产品变化通告： | 1Q2012 Discontinuation 30/Mar/2012 |
| 标准包装： | 10,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.13A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 200 毫欧 @ 1.95A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 10nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 200pF @ 15V |
| 功率 - 最大： | 400mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 带卷 (TR) |
NTR4502P, NVTR4502P
Electrical Characteristics (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
V (BR)DSS
V GS = 0 V, I D = ? 250 m A
? 30
V
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V, V DS = ? 30 V
T J = 25 ° C
? 1
m A
T J = 55 ° C
? 10
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 20 V
± 100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Drain ? to ? Source On Resistance
V GS(TH)
R DS(on)
V GS = V DS , I D = ? 250 m A
V GS = ? 10 V, I D = ? 1.95 A
? 1.0
155
? 3.0
200
V
m W
V GS = ? 4.5 V, I D = ? 1.5 A
240
350
Forward Transconductance
g FS
V DS = ? 10 V, I D = ? 1.25 A
3
S
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C ISS
C OSS
C RSS
V GS = 0 V, f = 1 MHz, V DS = ? 15 V
200
80
50
pF
Total Gate Charge
Q G(TOT)
V GS = ? 10 V, V DS = ? 15 V; I D = ? 1.95 A
6
10
nC
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
SWITCHING CHARACTERISTICS (Note 4)
Q G(TH)
Q GS
Q GD
0.3
1
1.7
Turn ? On Delay Time
Rise Time
Turn ? Off Delay Time
Fall Time
t d(ON)
t r
t d(OFF)
t f
V GS = ? 10 V, V DD = ? 15 V,
I D = ? 1.95 A, R G = 6 W
5.2
12
19
17.5
10
20
35
30
ns
DRAIN ? SOURCE DIODE CHARACTERISTICS (Note 3)
Forward Diode Voltage
Reverse Recovery Time
V SD
t RR
V GS = 0 V, I S = ? 1.25 A
V GS = 0 V, dI SD /d t = 100 A/ m s, I S = ? 1.25 A
? 0.8
23
? 1.2
V
ns
2. Surface ? mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. [1 oz] including traces).
3. Pulse Test: pulse width v 300 m s, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
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