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| 型号： | NTR4503NT3 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 1.5A SOT-23 |
| 标准包装： | 10,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 110 毫欧 @ 2.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 7nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 250pF @ 24V |
| 功率 - 最大： | 420mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 带卷 (TR) |
NTR4503N, NVTR4503N
Power MOSFET
30 V, 2.5 A, Single N ? Channel, SOT ? 23
Features
? Leading Planar Technology for Low Gate Charge / Fast Switching
? 4.5 V Rated for Low Voltage Gate Drive
? SOT ? 23 Surface Mount for Small Footprint (3 x 3 mm)
? AEC Q101 Qualified ? NVTR4503N
? These Devices are Pb ? Free and are RoHS Compliant
Applications
? DC ? DC Conversion
? Load/Power Switch for Portables
? Load/Power Switch for Computing
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
V (BR)DSS
30 V
http://onsemi.com
R DS(on) TYP
85 m W @ 10 V
105 m W @ 4.5 V
N ? Channel
I D MAX
2.5 A
Parameter
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
Symbol
V DSS
V GS
Value
30
± 20
Unit
V
V
D
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
t ≤ 10 s
Steady
State
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 25 ° C
I D
P D
2.0
1.5
2.5
0.73
A
W
G
S
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
I D
P D
1.5
1.1
0.42
A
W
1
3
MARKING DIAGRAM/
PIN ASSIGNMENT
3
Drain
Pulsed Drain Current
ESD Capability (Note 3)
t p = 10 m s
C = 100 pF,
RS = 1500 W
I DM
ESD
10
125
A
V
2
SOT ? 23
CASE 318
TR3 M G
G
Operating Junction and Storage Temperature
T J ,
T stg
? 55 to
150
° C
STYLE 21
1
Gate
2
Source
Source Current (Body Diode)
Peak Source Current
(Diode Forward)
t p = 10 m s
I S
I SM
2.0
4.0
A
A
TR3 = Specific Device Code
M = Date Code
G = Pb ? Free Package
(Note: Microdot may be in either location)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T L
260
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
ORDERING INFORMATION
Device Package Shipping ?
NTR4503NT1G SOT ? 23 3000 / Tape & Reel
(Pb ? Free)
Parameter
Junction ? to ? Ambient ? Steady State (Note 1)
Symbol
R q JA
Max
170
Unit
° C/W
NVTR4503NT1G
SOT ? 23
(Pb ? Free)
3000 / Tape & Reel
Junction ? to ? Ambient ? t < 10 s (Note 1) R q JA 100
Junction ? to ? Ambient ? Steady State (Note 2) R q JA 300
1. Surface ? mounted on FR4 board using 1 in sq pad size.
2. Surface ? mounted on FR4 board using the minimum recommended pad size.
3. ESD Rating Information: HBM Class 0.
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2012
July, 2012 ? Rev. 6
1
Publication Order Number:
NTR4503N/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTR4503NT3G | 功能描述:MOSFET 30V 2.5A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTR50A1000BTRF | 制造商:NIC Components Corp 功能描述:RES THNFLM 2512 100 OHM 0.05% 1/2W 10PPM/ C SMD - Tape and Reel |
| NTR50A1000CTRF | 制造商:NIC Components Corp 功能描述:RES THNFLM 2512 100 OHM 0.05% 1/2W 25PPM/ C SMD - Tape and Reel |
| NTR50A1000DTRF | 制造商:NIC Components Corp 功能描述:RES THNFLM 2512 100 OHM 0.05% 1/2W 50PPM/ C SMD - Tape and Reel |
| NTR50A1001BTRF | 制造商:NIC Components Corp 功能描述:RES THNFLM 2512 1K OHM 0.05% 1/2W 10PPM/ C SMD - Tape and Reel |
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