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| 型号： | NTTD4401FR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 2.4A MICRO8 |
| 产品变化通告： | Product Discontinuation 27/Jan/2012 |
| 标准包装： | 1 |
| 系列： | FETKY™ |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 90 毫欧 @ 3.3A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 18nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 750pF @ 16V |
| 功率 - 最大： | 780mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TSSOP，8-MSOP（0.118"，3.00mm 宽） |
| 供应商设备封装： | Micro8? |
| 包装： | 剪切带 (CT) |
| 其它名称： | NTTD4401FR2GOSCT |
NTTD4401F
FETKY t Power MOSFET
and Schottky Diode
?20 V, ?3.3 A P?Channel with 20 V,
1.0 A Schottky Diode, Micro8 t Package
http://onsemi.com
The FETKY product family incorporates low R DS(on) , true logic level
MOSFETs packaged with industry leading, low forward drop, low
MOSFET PRODUCT SUMMARY
leakage Schottky Barrier Diodes to offer high efficiency components in
a space saving configuration. Independent pinouts for TMOS and
Schottky die allow the flexibility to use a single component for
switching and rectification functions in a wide variety of applications.
V (BR)DSS
?20 V
R DS(on) Typ
70 m W @ ?4.5 V
100 m W @ ?2.7 V
I D Max
?3.3 A
?2.7 A
Features
? Low V F and Low Leakage Schottky Diode
? Lower Component Placement and Inventory Costs along with Board
Space Savings
? Logic Level Gate Drive – Can be Driven by Logic ICs
? Pb?Free Package is Available
SCHOTTKY DIODE SUMMARY
V R Max I F Max V F Max
20 V 2.0 A 600 mV @ I F = 2.0 A
S A
Applications
? Buck Converter
? Synchronous Rectification
? Low Voltage Motor Control
? Load Management in Battery Packs, Chargers, Cell Phones, and
other Portable Products
G
D
P?Channel MOSFET
C
Schottky Diode
MOSFET MAXIMUM RATINGS (T A = 25 ° C unless otherwise noted)
Rating
Drain?to?Source Voltage
Symbol
V DSS
Value
?20
Unit
V
MARKING DIAGRAM &
PIN ASSIGNMENT
Gate?to?Source Voltage
Continuous Drain
T A = 25 ° C
V GS
I D
$ 10
?3.3
V
A
8
8
C CD D
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
T A = 100 ° C
T A = 25 ° C
P D
?2.1
1.42
W
1
Micro8
WW
BG G
G
Continuous Drain
Current (Note 2)
T A = 25 ° C
T A = 100 ° C
I D
?2.4
?1.5
A
CASE 846A
1
A AS G
Power Dissipation
(Note 2)
Pulsed Drain
Current
Operating Junction and
Steady T A = 25 ° C
State
t = 10 m s
P D
I DM
T J , T STG
0.78
?10
?55 to
W
A
° C
BG = Specific Device Code
WW = Work Week
G = Pb?Free Package
(Note: Microdot may be in either location)
Storage Temperature
150
Single Pulse Drain?to?Source Avalanche
Energy Starting T A = 25 ° C (t v 10 s)
EAS
150
mJ
ORDERING INFORMATION
Lead Temperature for Soldering Purposes T L 260 ° C
(1/8 ″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Device
NTTD4401FR2
NTTD4401FR2G
Package
Micro8
Micro8
(Pb?Free)
Shipping ?
4000/Tape & Reel
4000/Tape & Reel
1. Surface?mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface?mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.172 in sq).
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2007
April, 2007 ? Rev. 6
1
Publication Order Number:
NTTD4401F/D
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