参数资料
型号: NTTS2P03R2
厂商: ON SEMICONDUCTOR
元件分类: 小信号晶体管
英文描述: Power MOSFET -2.48 Amps, -30 Volts P-Channel Enhancement Mode(-2.48A,-30V,P沟道增强型MOS场效应管(D2PAK封装))
中文描述: 2100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: MINIATURE, CASE 846A-02, MICRO-8
文件页数: 4/8页
文件大小: 89K
代理商: NTTS2P03R2
NTTS2P03R2
http://onsemi.com
4
t
r
t
GATE–TO–SOURCE OR DRAIN–TO–SOURCE
VOLTAGE (VOLTS)
t
d (off)
Figure 7. Capacitance Variation
Figure 8. Gate–to–Source and
Drain–to–Source Voltage versus Total Charge
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage
versus Current
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Diode Reverse Recovery Waveform
V
DS
= 0 V
V
GS
= 0 V
T
J
= 25
°
C
C
iss
C
rss
C
oss
C
rss
C
iss
V
DD
= –24 V
I
D
V
GS
= –10 V
t
f
t
d (on)
V
GS
= 0 V
T
J
= 25
°
C
di/dt
t
rr
t
a
t
p
I
S
0.25 I
S
TIME
I
S
t
b
1
0
0.9
0.8
0.7
0.6
0.5
0.4
0.5
1
1.5
2.5
3
–V
SD,
SOURCE–TO–DRAIN VOLTAGE (VOLTS)
1
100
10
1
10
100
R
G,
GATE RESISTANCE (OHMS)
30
–10
1200
1000
–5
0
5
10
15
800
600
200
0
S
C
–V
DS
–V
GS
QT
Q2
Q1
V
GS
I
D
= –2.48 A
T
J
= 25
°
C
V
DS
0
8
0
3
6
1
4
2
4
6
10
16
Q
g
, TOTAL GATE CHARGE (nC)
30
25
20
15
10
5
0
D
D
12
2
G
G
0.1
V
DS
, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
0.01
1
I
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
V
GS
= 30 V
SINGLE PULSE
T
C
= 25
°
C
10
dc
1
100
100
10
10 ms
1 ms
0.1
20
25
400
14
5
2
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NTTS2P03R2/D 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET -2.48 Amps, -30 Volts
NTTS2P03R2_05 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -2.48 Amps, -30 Volts
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NTUD01N02/D 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET 100 mAmps, 20 Volts
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