参数资料
型号: NTVB300SC-L
厂商: ON Semiconductor
文件页数: 2/5页
文件大小: 0K
描述: IC THY SURGE PROTECTOR 350V SMB
标准包装: 2,500
电压 - 击穿: 400V
电压 - 断路: 300V
电压 - 导通状态: 4V
电流 - 峰值脉冲(10 x 1000µs): 100A
电流 - 保持 (Ih): 150mA
元件数: 1
电容: 71pF
封装/外壳: DO-214AA,SMB
包装: 带卷 (TR)
NTVB Series
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted)
Characteristics (Notes 1, 2, 3)
Symbol
Min
Typ
Max
Unit
Breakover Voltage (Both Polarities)
Off ? State Voltage (Both Polarities)
Off State Current
NTVB058NSx ? L
NTVB065NSx ? L
NTVB090NSx ? L
NTVB170Sx ? L
NTVB170NSx ? L
NTVB180Sx ? L
NTVB200Sx ? L
NTVB220NSx ? L
NTVB270Sx ? L
NTVB275NSx ? L
NTVB300Sx ? L
NTVB058NSx ? L
NTVB065NSx ? L
NTVB090NSx ? L
NTVB170Sx ? L
NTVB170NSx ? L
NTVB180Sx ? L
NTVB200Sx ? L
NTVB220NSx ? L
NTVB270Sx ? L
NTVB275NSx ? L
NTVB300Sx ? L
( V D1 = 50 V ) Both Polarities
( V D2 = V DRM ) Both Polarities
V (BO)
V DRM
I DRM1
I DRM2
58
65
90
170
170
170
200
220
270
275
300
77
88
130
265
220
240
320
300
365
350
400
2.0
5.0
V
V
m A
m A
Holding Current (Both Polarities) (Note 3) V S = 500 V; I T = 2.2 A
On ? State Voltage I T = 1.0 A(pk) (PW = 300 m Sec, DC = 2%)
Maximum Non ? Repetitive Rate of Change of On ? State Current (Note 1)
(Haefely test method, 1.0 pk < 100 A)
Critical Rate of Rise of Off ? State Voltage
(Linear Waveform, V D = 0.8 V DRM , T J = 25 ° C)
I H
V T
di/dt
dv/dt
150
?
?
5.0
250
?
?
?
?
4.0
500
?
mA
V
A/ m Sec
kV/ m Sec
CAPACITANCE
Typ
Characteristics
Symbol
A
B
C
Unit
(f=1.0 MHz, 1.0 V rms , 2 Vdc bias)
NTVB058NSx ? L
NTVB065NSx ? L
NTVB090NSx ? L
NTVB170Sx ? L
NTVB170NSx ? L
NTVB180Sx ? L
NTVB200Sx ? L
NTVB220NSx ? L
NTVB270Sx ? L
NTVB275NSx ? L
NTVB300Sx ? L
C o
84
79
58
39
39
37
36
33
31
28
28
129
123
95
150
59
59
56
52
47
44
44
222
198
154
195
99
97
110
81
76
97
71
pF
1. Electrical parameters are based on pulsed test methods.
2. Measured under pulsed conditions to reduce heating
3. Allow cooling before testing second polarity.
http://onsemi.com
2
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