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参数资料
| 型号： | NTZD3154NT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET 2N-CH 20V 540MA SOT-563 |
| 产品目录绘图： | MOSFET SOT-563 Pkg |
| 标准包装： | 10 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 540mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 550 毫欧 @ 540mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 2.5nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 150pF @ 16V |
| 功率 - 最大： | 250mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-563，SOT-666 |
| 供应商设备封装： | SOT-563 |
| 包装： | 标准包装 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | NTZD3154NT1GOSDKR |
NTZD3154N
Small Signal MOSFET
20 V, 540 mA, Dual N ? Channel
Features
?
?
?
?
?
Low R DS(on) Improving System Efficiency
Low Threshold Voltage
Small Footprint 1.6 x 1.6 mm
ESD Protected Gate
These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
V (BR)DSS
20
http://onsemi.com
R DS(on) Typ I D Max (Note 1)
400 m W @ 4.5 V
500 m W @ 2.5 V 540 mA
700 m W @ 1.8 V
Applications
? Load/Power Switches
? Power Supply Converter Circuits
? Battery Management
? Cell Phones, Digital Cameras, PDAs, Pagers, etc.
G1
D1
G2
D2
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted.)
Parameter Symbol
Value
Unit
S1
N ? Channel
MOSFET
S2
T A = 85 ° C
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
Continuous Drain Current
(Note 1)
Power Dissipation
(Note 1)
Continuous Drain Current
(Note 1)
Power Dissipation
(Note 1)
Pulsed Drain Current
Steady T A = 25 ° C
State
Steady State
T A = 25 ° C
t v 5s
T A = 85 ° C
t v 5s
t p = 10 m s
V DSS
V GS
I D
P D
I D
P D
I DM
20
± 6.0
540
390
250
570
410
280
1.5
V
V
mA
mW
mA
mW
A
MARKING
DIAGRAM
6
1 TV M G
SOT ? 563 ? 6 G
CASE 463A
TV = Specific Device Code
M = Date Code
G = Pb ? Free Package
(Note: Microdot may be in either location)
PINOUT: SOT ? 563
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
T J ,
T STG
I S
T L
? 55 to
150
350
260
° C
mA
° C
S 1 1
G 1 2
6 D 1
5 G 2
THERMAL RESISTANCE RATINGS
Parameter
Junction ? to ? Ambient – Steady State
(Note 1)
Junction ? to ? Ambient – t v 5 s (Note 1)
Symbol
R q JA
Max
500
447
Unit
° C/W
D 2
3
Top View
4 S 2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu. area = 1.127 in sq [1 oz] including traces).
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
? Semiconductor Components Industries, LLC, 2013
January, 2013 ? Rev. 2
1
Publication Order Number:
NTZD3154N/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTZD3154NT1H | 制造商:ON Semiconductor 功能描述:NFET SOT563 20V 540MA TR - Tape and Reel |
| NTZD3154NT2G | 功能描述:MOSFET NFET 540MA 20V TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTZD3154NT5G | 功能描述:MOSFET 20V 540mA Dual N-Channel w/ESD RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTZD3155C | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET Complementary 20 V, 540 mA / -430 mA, with ESD protection, SOT-563 package. |
| NTZD3155CT1G | 功能描述:MOSFET 20V 540mA/-430mA Complementary w/ESD RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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