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| 型号： | NTZD3155CT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N+P 20V 430MA SOT-563 |
| 产品目录绘图： | MOSFET SOT-563 Pkg |
| 标准包装： | 10 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 540mA，430mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 550 毫欧 @ 540mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 2.5nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 150pF @ 16V |
| 功率 - 最大： | 250mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-563，SOT-666 |
| 供应商设备封装： | SOT-563 |
| 包装： | 标准包装 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | NTZD3155CT1GOSDKR |
NTZD3155C
Small Signal MOSFET
Complementary 20 V, 540 mA / ? 430 mA,
with ESD protection, SOT ? 563 package.
Features
? Leading Trench Technology for Low R DS(on) Performance
? High Efficiency System Performance
? Low Threshold Voltage
? ESD Protected Gate
? Small Footprint 1.6 x 1.6 mm
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
? DC ? DC Conversion Circuits
? Load/Power Switching with Level Shift
? Single or Dual Cell Li ? Ion Battery Operated Systems
? High Speed Circuits
? Cell Phones, MP3s, Digital Cameras, and PDAs
V (BR)DSS
N ? Channel
20 V
P ? Channel
? 20 V
S 1
http://onsemi.com
R DS(on) Typ
0.4 W @ 4.5 V
0.5 W @ 2.5 V
0.7 W @ 1.8 V
0.5 W @ ? 4.5 V
0.6 W @ ? 2.5 V
1.0 W @ ? 1.8 V
PINOUT: SOT ? 563
1 6
I D Max
(Note 1)
540 mA
? 430 mA
D 1
MAXIMUM RATINGS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Value
Unit
G 1
2
5
G 2
Drain ? to ? Source Voltage
V DSS
20
V
D 2
3
4
S 2
Gate ? to ? Source Voltage
V GS
± 6
V
N ? Channel Continu-
ous Drain Current
(Note 1)
P ? Channel Continu-
ous Drain Current
(Note 1)
Steady
State
t v 5s
Steady
State
t v 5s
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
I D
540
390
570
? 430
? 310
? 455
mA
6
1
SOT ? 563 ? 6
CASE 463A
Top View
MARKING
DIAGRAM
TW M G
G
Power Dissipation
(Note 1)
Pulsed Drain Current
Steady
State
t v 5s
N ? Channel
P ? Channel
T A = 25 ° C
t p = 10 m s
P D
I DM
250
280
1500
? 750
mW
mA
TW = Specific Device Code
M = Date Code
G = Pb ? Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Operating Junction and Storage Temperature
Source Current (Body Diode)
T J ,
T STG
I S
? 55 to
150
350
° C
mA
Device
NTZD3155CT1G
NTZD3155CT1H
Package
SOT ? 563
(Pb ? Free)
Shipping ?
4000 / Tape & Reel
T L
4000 / Tape & Reel
NTZD3155CT2H
8000 / Tape & Reel
NTZD3155CT5H
Lead Temperature for Soldering Purposes 260 ° C
(1/8” from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq [1 oz] including traces).
NTZD3155CT2G SOT ? 563
(Pb ? Free)
NTZD3155CT5G SOT ? 563
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2013
January, 2013 ? Rev. 3
1
Publication Order Number:
NTZD3155C/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTZD3155CT1G | 制造商:ON Semiconductor 功能描述:DUAL N/P CH MOSFET 20V SOT-563 制造商:ON Semiconductor 功能描述:DUAL N/P CH MOSFET, 20V, SOT-563 |
| NTZD3155CT1H | 制造商:ON Semiconductor 功能描述:COMP SOT563 20V 540MA TR - Tape and Reel 制造商:ON 功能描述:COMP SOT563 20V 540MA TR |
| NTZD3155CT2G | 功能描述:MOSFET COMP 540mA 20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTZD3155CT5G | 功能描述:MOSFET 20V 540mA/-430mA Complementary w/ESD RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTZD3156C | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET |
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