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| 型号： | NTZD3156CT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CH 20V SOT-563 |
| 产品变化通告： | Product Obsolescence 07/Jul/2010 |
| 标准包装： | 4,000 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 540mA，430mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 550 毫欧 @ 540mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 2.5nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 72pF @ 16V |
| 功率 - 最大： | 250mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-563，SOT-666 |
| 供应商设备封装： | SOT-563 |
| 包装： | 带卷 (TR) |
NTZD3156C
Small Signal MOSFET
20 V, 540 mA / ? 20 V, ? 430 mA
Complementary N ? and P ? Channel
MOSFETs with Integrated Pull Up/Down
Resistor and ESD Protection
http://onsemi.com
Features
? Leading Trench Technology for Low R DS(on) Performance
? High Efficiency System Performance
? Low Threshold Voltage
? Integrated G ? S Resistor on Both Devices
? ESD Protected Gate
? Small Footprint 1.6 x 1.6 mm
? These are Pb ? Free Devices
Applications
? Load/Power Switching with Level Shift
? Portable Electronic Products such as GPS, Cell Phones, DSC, PMP,
Bluetooth Accessories
V (BR)DSS
N ? Channel
20 V
P ? Channel
? 20 V
S 1
R DS(on) Max
0.55 W @ 4.5 V
0.7 W @ 2.5 V
0.9 W @ 1.8 V
0.9 W @ ? 4.5 V
1.2 W @ ? 2.5 V
2.0 W @ ? 1.8 V
PINOUT: SOT ? 563
1 6
I D Max
(Note 1)
540 mA
? 430 mA
D 1
MAXIMUM RATINGS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Value
Unit
G 1
2
5
G 2
Drain ? to ? Source Voltage
V DSS
20
V
Steady
State
Steady
State
MARKING
ZC M G
G
Gate ? to ? Source Voltage
N ? Channel Continu-
ous Drain Current
(Note 1)
t v 5s
P ? Channel Continu-
ous Drain Current
(Note 1)
t v 5s
Power Dissipation Steady
(Note 1) State
t v 5s
Pulsed Drain Current N ? Channel
P ? Channel
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 25 ° C
t p = 10 m s
V GS
I D
P D
I DM
± 6
540
390
570
? 430
? 310
? 455
250
280
1500
? 750
V
mA
mW
mA
D 2 3 4 S 2
Top View
6
DIAGRAM
1
SOT ? 563 ? 6
CASE 463A
STYLE 9
ZC = Specific Device Code
M = Date Code
G = Pb ? Free Package
(Note: Microdot may be in either location)
Operating Junction and Storage Temperature
T J ,
T STG
? 55 to
150
° C
ORDERING INFORMATION
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
I S
T L
350
260
mA
° C
Device
NTZD3156CT1G
Package
SOT ? 563
Shipping ?
4000 / Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq [1 oz] including traces).
NTZD3156CT2G SOT ? 563 4000 / Tape & Reel
NTZD3156CT5G SOT ? 563 8000 / Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2008
September, 2008 ? Rev. 0
1
Publication Order Number:
NTZD3156C/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTZD3156CT2G | 功能描述:MOSFET COMP SOT563 20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTZD3156CT5G | 功能描述:MOSFET COMP SOT563 20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTZD3158PT1G | 制造商:ON Semiconductor 功能描述:PFET SOT563 20V 430MA TR - Tape and Reel |
| NTZD5110N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:60 V, 310 mA, Dual N−Channel with ESD Protection, SOT−563 |
| NTZD5110NT1 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:60 V, 310 mA, Dual N−Channel with ESD Protection, SOT−563 |
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