参数资料
型号: NTZS3151PT1G
厂商: ON Semiconductor
文件页数: 3/5页
文件大小: 0K
描述: MOSFET P-CH 20V 860MA SOT-563
产品目录绘图: MOSFET SOT-563 Pkg
标准包装: 10
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 860mA
开态Rds(最大)@ Id, Vgs @ 25° C: 150 毫欧 @ 950mA,4.5V
Id 时的 Vgs(th)(最大): 1V @ 250µA
闸电荷(Qg) @ Vgs: 5.6nC @ 4.5V
输入电容 (Ciss) @ Vds: 458pF @ 16V
功率 - 最大: 170mW
安装类型: 表面贴装
封装/外壳: SOT-563,SOT-666
供应商设备封装: SOT-563
包装: 标准包装
产品目录页面: 1558 (CN2011-ZH PDF)
其它名称: NTZS3151PT1GOSDKR
NTZS3151P
TYPICAL PERFORMANCE CURVES (T J = 25 ° C unless otherwise noted)
4
3.5
3
2.5
V GS = ? 3 V
V GS = ? 2 V
T J = 25 ° C
? 1.8 V
? 1.6 V
4
3.5
3
2.5
V DS ≥ ? 10 V
2
2
1.5
? 1.4 V
1.5
1
? 1.2 V
1
T J = ? 55 ° C
0.5
0
0
0.5
1
1.5
2
2.5
3
3.5
4
? 1 V
4.5
5
0.5
0
0
0.5
25 ° C
1
125 ° C
1.5
2
2.5
3
? V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 1. On ? Region Characteristics
? V GS , GATE ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.3
0.2
V GS = ? 4.5 V
T J = 125 ° C
0.3
0.2
T J = 25 ° C
V GS = ? 1.8 V
V GS = ? 2.5 V
V GS = ? 4.5 V
0.1
T J = 25 ° C
T J = ? 55 ° C
0.1
0
0
1
2
3
4
0
0
0.5
1
1.5
2
2.5
3
3.5
4
? I D, DRAIN CURRENT (AMPS)
Figure 3. On ? Resistance vs. Drain Current and
Temperature
? I D, DRAIN CURRENT (AMPS)
Figure 4. On ? Resistance vs. Drain Current and
Gate Voltage
1.8
1.6
I D = ? 0.95 A
V GS = ? 4.5 V
10000
V GS = 0 V
T J = 150 ° C
1.4
1.2
1
0.8
1000
T J = 125 ° C
0.6
? 50
? 25
0
25
50
75
100
125
150
100
0
5
10
15
20
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On ? Resistance Variation with
Temperature
http://onsemi.com
3
? V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 6. Drain ? to ? Source Leakage Current
vs. Voltage
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