- 您现在的位置：买卖IC网 > PDF目录17304 > NUD3048MT1 (ON Semiconductor)IC FET SW N-CH 100V ESD 6TSOP PDF资料下载
参数资料
| 型号： | NUD3048MT1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | IC FET SW N-CH 100V ESD 6TSOP |
| 标准包装： | 10 |
| 类型： | 低端 |
| 输入类型： | 非反相 |
| 输出数： | 1 |
| 导通状态电阻： | 65 毫欧 |
| 电流 - 峰值输出： | 700mA |
| 工作温度： | -25°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74，SOT-457 |
| 供应商设备封装： | 6-TSOP |
| 包装： | 剪切带 (CT) |
| 其它名称： | NUD3048MT1OSCT |
NUD3048
MAXIMUM RATINGS
Symbol
V DSS
V G1SS
I D
P D
V G2SS
T Jmax
R q JA
ESD
Rating
Drain to Source Voltage – Continuous
Gate to Source Voltage – Continuous @ 1.0 mA
Drain Current – Continuous (T A =25 _ C) (Note 1)
(Note 2)
Power Dissipation (T A =25 _ C) (Note 1)
(Note 2)
Gate Resistor to Source Voltage – Continuous
Maximum Junction Temperature
Thermal Impedance (Junction ? to ? Ambient) (Note 1)
Thermal Impedance (Junction ? to ? Ambient) (Note 2)
Human Body Model (HBM) Class 2
Machine Model Class A
Value
100
15
0.7
1.2
0.66
1.56
100
150
190
80
2000
160
Unit
V
V
A
W
V
° C
° C/W
V
V
According to EIA/JESD22/A114 Specification
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS (T J =25 _ C unless otherwise note d.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain to Source Leakage Current (V DS = 80 V, V GS = 0 V)
Gate Body Leakage Current
(V GS =10 V, V DS = 0 V)
(V GS = 10 V, V DS = 0 V, T J = 125 ° C)
I DSS
I GSS
I GSS
?
?
?
20
3.0
6.0
100
10
20
m A
m A
ON CHARACTERISTICS
Gate Threshold Voltage (I D = 1.0 mA)
Drain to Source Resistance (V GS = 4.5 V, I D = 100 mA)
Drain to Source Resistance (V GS = 10 V, I D = 100 mA)
V GS
R DS(on)
R DS(on)
1.3
?
?
1.7
0.65
0.6
2.0
0.82
0.72
V
W
W
DYNAMIC CHARACTERISTICS
Input Capacitance (V DS = 5.0 V, V GS = 0 V, f = 10 kHz)
Output Capacitance (V DS = 5.0 V, V GS = 0 V, f = 10 kHz)
Transfer Capacitance (V DS = 5.0 V, V GS = 0 V, f = 10 kHz)
C iss
C oss
C rss
?
?
?
135
75
26
?
?
?
pF
pF
pF
GATE BIAS CHARACTERISTICS
Gate Resistor
Gate Zener Breakdown Voltage (I Z = 1.0 mA) (Note 3)
Gate Zener Breakdown Voltage (I Z = 3.0 mA) (Note 4)
R G
V Z
75
15
100
100
17
115
125
?
?
k W
V
1.
2.
3.
4.
Min pad, 1 oz. Cu.
1 inch pad, 1 oz Cu.
Measured from gate 1 to source.
Measured from gate 2 to source.
http://onsemi.com
2
相关PDF资料 |
PDF描述 |
|---|---|
| L-14C8N2JV4T | CER INDUCTOR 8.2NH 0603 |
| 0210200323 | CABLE FLAT FLEX 5" .50MM 30 POS |
| R1S-1212/HP-R | CONV DC/DC 1W 12VIN 12VOUT |
| R1S-1209/HP-R | CONV DC/DC 1W 12VIN 09VOUT |
| CB2518T680K | INDUCTOR POWER 68UH 10% 1007 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NUD3048MT1G | 功能描述:MOSFET 100V 700mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NUD3105 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Integrated Relay, Inductive Load Driver |
| NUD3105_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Integrated Relay, Inductive Load Driver |
| NUD3105D | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Integrated Relay, Inductive Load Driver |
| NUD3105-D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NUD3105LT1 Datasheet |
发布紧急采购，3分钟左右您将得到回复。