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参数资料
| 型号： | NUD3105D |
| 厂商： | ON SEMICONDUCTOR |
| 英文描述： | Integrated Relay, Inductive Load Driver |
| 中文描述： | 综合继电器，感性负载驱动程序 |
| 文件页数： | 2/8页 |
| 文件大小： | 81K |
| 代理商： | NUD3105D |
NUD3105D
http://onsemi.com
2
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise specified)
Symbol
Rating
Value
Unit
V
DSS
Drain to Source Voltage Continuous
6.0
V
dc
V
GS
Gate to Source Voltage – Continuous
6.0
V
dc
I
D
Drain Current – Continuous
500
mA
E
z
Single Pulse DraintoSource Avalanche Energy (
T
Jinitial =
25
°
C)
50
mJ
T
J
Junction Temperature
150
°
C
T
A
Operating Ambient Temperature
40 to 85
°
C
T
stg
Storage Temperature Range
65 to +150
°
C
P
D
Total Power Dissipation (Note 1)
Derating Above 25
°
C
380
1.5
mW
mW/
°
C
R
JA
Thermal Resistance JunctiontoAmbient
329
°
C/W
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. This device contains ESD protection and exceeds the following tests:
Human Body Model 2000 V per MIL_STD883, Method 3015.
Machine Model Method 200 V.
TYPICAL ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
Unit
OFF CHARACTERISTICS
V
BRDSS
Drain to Source Sustaining Voltage (Internally Clamped)
(ID = 10 mA)
6.0
8.0
9.0
V
B
VGSO
I
g
= 1.0 mA
8.0
V
I
DSS
Drain to Source Leakage Current
(V
DS
= 5.5 V , V
GS
= 0 V, T
J
= 25
°
C)
(V
DS
= 5.5 V, V
GS
= 0 V, T
J
= 85
°
C )
15
15
A
I
GSS
Gate Body Leakage Current
(V
GS
= 3.0 V, V
DS
= 0 V)
(V
GS
= 5.0 V, V
DS
= 0 V)
5.0
35
65
A
ON CHARACTERISTICS
V
GS(th)
Gate Threshold Voltage
(V
GS
= V
DS
, I
D
= 1.0 mA)
(V
GS
= V
DS
, I
D
= 1.0 mA, T
J
= 85
°
C)
0.8
0.8
1.2
1.4
1.4
V
R
DS(on)
Drain to Source OnResistance
(I
D
= 250 mA, V
GS
= 3.0 V)
(I
D
= 500 mA, V
GS
= 3.0 V)
(I
D
= 500 mA, V
GS
= 5.0 V)
(I
D
= 500 mA, V
GS
= 3.0 V, T
J
= 85
°
C)
(I
D
= 500 mA, V
GS
= 5.0 V, T
J
= 85
°
C)
1.2
1.3
0.9
1.3
0.9
I
DS(on)
Output Continuous Current
(V
DS
= 0.25 V, V
GS
= 3.0 V)
(V
DS
= 0.25 V, V
GS
= 3.0 V, T
J
= 85
°
C)
300
200
400
mA
g
FS
Forward Transconductance
(V
OUT
= 5.0 V, I
OUT
= 0.25 A)
350
570
mmhos
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| NUD3105DD | Integrated Relay, Inductive Load Driver |
| NUD3105DMT1 | Integrated Relay, Inductive Load Driver |
| NUD3105 | Integrated Relay, Inductive Load Driver |
| NUD3105LT1 | Integrated Relay, Inductive Load Driver |
| NUD3105LT1G | Integrated Relay, Inductive Load Driver |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NUD3105-D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NUD3105LT1 Datasheet |
| NUD3105D_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Integrated Relay, Inductive Load Driver |
| NUD3105DD | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Integrated Relay, Inductive Load Driver |
| NUD3105DMT1 | 功能描述:MOSFET 5V Dual Integrated RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NUD3105DMT1G | 功能描述:MOSFET 5V Dual Integrated Relay Inductive Load RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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