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参数资料
| 型号： | NUD3105DD |
| 厂商： | ON SEMICONDUCTOR |
| 英文描述： | Integrated Relay, Inductive Load Driver |
| 中文描述： | 综合继电器，感性负载驱动程序 |
| 文件页数： | 4/8页 |
| 文件大小： | 81K |
| 代理商： | NUD3105DD |
NUD3105D
http://onsemi.com
4
TYPICAL CHARACTERISTICS
V
Z
,
V
GS
= 0 V
11.0
12.0
10.0
9.0
8.0
7.0
13.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 2. Output Characteristics
V
GS
, GATETOSOURCE VOLTAGE (V)
Figure 3. Transfer Function
TEMPERATURE (
°
C)
Figure 4. On Resistance Variation vs. Temperature
Figure 5. R
DS(ON)
Variation with
GateToSource Voltage
Figure 6. Zener Voltage vs. Temperature
I
Z
, ZENER CURRENT (mA)
Figure 7. Zener Clamp Voltage vs. Zener Current
I
D
,
50
25
0
25
50
75
100
1200
1000
800
600
400
200
0
125
R
D
,
R
V
Z
,
50
25
0
25
50
75
100
125
I
Z
= 10 mA
I
D
= 0.25 A
V
GS
= 3.0 V
50
°
C
1.0
1.2
1.4
1.6
0.8
50
45
40
35
30
25
20
2.0
15
1.8
R
D
,
R
I
D
= 250 A
1.0
10
0.1
100
V
GS
= 1.0 V
I
D
,
V
GS
= 5.0 V
V
GS
= 3.0 V
V
GS
= 2.0 V
T
J
= 25
°
C
10
1.0
0.1
0.01
0.001
0.0001
0.00001
0.000001
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
85
°
C
40
°
C
V
DS
= 0.8 V
I
D
= 0.5 A
V
GS
= 3.0 V
I
D
= 0.5 A
V
GS
= 5.0 V
V
GS
, GATETOSOURCE VOLTAGE (V)
50
°
C
85
°
C
40
°
C
125
°
C
8.20
8.18
8.16
8.14
8.12
8.10
8.08
8.06
8.04
8.02
8.00
TEMPERATURE (
°
C)
10
1.0
0.1
0.01
0.001
0.0001
0.00001
85
°
C
40
°
C
25
°
C
25
°
C
25
°
C
1000
6.0
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相关代理商/技术参数 |
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|---|---|
| NUD3105DMT1 | 功能描述:MOSFET 5V Dual Integrated RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NUD3105DMT1G | 功能描述:MOSFET 5V Dual Integrated Relay Inductive Load RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NUD3105DMT1G-CUT TAPE | 制造商:ON 功能描述:NUD Series 6 V 500 mA SMT Integrated Relay Inductive Load Driver - SC-74 |
| NUD3105LT1 | 功能描述:MOSFET 8V Inductive Load RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NUD3105LT1G | 功能描述:MOSFET 8V Inductive Load RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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