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| 型号： | NUD3105DMT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | IC INDCT LOAD DRVR DUAL SC74-6 |
| 标准包装： | 1 |
| 类型： | 低端 |
| 输入类型： | 非反相 |
| 输出数： | 2 |
| 导通状态电阻： | 1.2 欧姆 |
| 电流 - 输出 / 通道： | 400mA |
| 电流 - 峰值输出： | 500mA |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74，SOT-457 |
| 供应商设备封装： | SC-74 |
| 包装： | 标准包装 |
| 产品目录页面： | 1118 (CN2011-ZH PDF) |
| 其它名称： | NUD3105DMT1GOSDKR |
NUD3105D
MAXIMUM RATINGS (T J = 25 ° C unless otherwise specified)
Symbol
V DSS
V GS
I D
E z
T J
T A
T stg
P D
R q JA
Rating
Drain to Source Voltage ? Continuous
Gate to Source Voltage – Continuous
Drain Current – Continuous
Single Pulse Drain ? to ? Source Avalanche Energy ( T Jinitial = 25 ° C)
Junction Temperature
Operating Ambient Temperature
Storage Temperature Range
Total Power Dissipation (Note 1)
Derating Above 25 ° C
Thermal Resistance Junction ? to ? Ambient
Value
6.0
6.0
500
50
150
? 40 to 85
? 65 to +150
380
1.5
329
Unit
V dc
V dc
mA
mJ
° C
° C
° C
mW
mW/ ° C
° C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This device contains ESD protection and exceeds the following tests:
Human Body Model 2000 V per MIL_STD ? 883, Method 3015.
Machine Model Method 200 V.
TYPICAL ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
Unit
OFF CHARACTERISTICS
V BRDSS
Drain to Source Sustaining Voltage (Internally Clamped)
6.0
8.0
9.0
V
(ID = 10 mA)
B VGSO
I DSS
I GSS
I g = 1.0 mA
Drain to Source Leakage Current
(V DS = 5.5 V , V GS = 0 V, T J = 25 ° C)
(V DS = 5.5 V, V GS = 0 V, T J = 85 ° C )
Gate Body Leakage Current
(V GS = 3.0 V, V DS = 0 V)
(V GS = 5.0 V, V DS = 0 V)
?
?
?
5.0
?
?
?
?
?
?
8.0
15
15
35
65
V
m A
m A
ON CHARACTERISTICS
V GS(th)
R DS(on)
I DS(on)
g FS
Gate Threshold Voltage
(V GS = V DS , I D = 1.0 mA)
(V GS = V DS , I D = 1.0 mA, T J = 85 ° C)
Drain to Source On ? Resistance
(I D = 250 mA, V GS = 3.0 V)
(I D = 500 mA, V GS = 3.0 V)
(I D = 500 mA, V GS = 5.0 V)
(I D = 500 mA, V GS = 3.0 V, T J = 85 ° C)
(I D = 500 mA, V GS = 5.0 V, T J = 85 ° C)
Output Continuous Current
(V DS = 0.25 V, V GS = 3.0 V)
(V DS = 0.25 V, V GS = 3.0 V, T J = 85 ° C)
Forward Transconductance
(V OUT = 5.0 V, I OUT = 0.25 A)
0.8
0.8
?
?
?
?
?
300
200
350
1.2
?
?
?
?
?
?
400
?
570
1.4
1.4
1.2
1.3
0.9
1.3
0.9
?
?
?
V
W
mA
mMhos
http://onsemi.com
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