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参数资料
| 型号： | NUD3112LT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | IC INDCT LOAD/RELAY DRVR SOT23 |
| 标准包装： | 1 |
| 类型： | 低端 |
| 输入类型： | 非反相 |
| 输出数： | 1 |
| 导通状态电阻： | 900 毫欧 |
| 电流 - 输出 / 通道： | 400mA |
| 电流 - 峰值输出： | 500mA |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 标准包装 |
| 产品目录页面： | 1118 (CN2011-ZH PDF) |
| 其它名称： | NUD3112LT1GOSDKR |
NUD3112
MAXIMUM RATINGS (T J = 25 ° C unless otherwise specified)
Symbol
V DSS
V GS
I D
E z
T J
T A
T stg
Rating
Drain to Source Voltage – Continuous
Gate to Source Voltage – Continuous
Drain Current – Continuous
Single Pulse Drain ? to ? Source Avalanche Energy ( T Jinitial = 25 ° C)
Junction Temperature
Operating Ambient Temperature
Storage Temperature Range
Value
14
6
500
50
150
? 40 to 85
? 65 to +150
Unit
V dc
V dc
mA
mJ
° C
° C
° C
P D
P D
R q JA
ESD
Total Power Dissipation (Note 1)
Derating Above 25 ° C
Total Power Dissipation (Note 1)
Derating Above 25 ° C
Thermal Resistance Junction ? to ? Ambient (Note 1)
Human Body Model (HBM) According to EIA/JESD22/A114
SOT ? 23
SC ? 74
SOT ? 23
SC ? 74
225
1.8
380
3.0
556
329
2000
mW
mW/ ° C
mW
mW/ ° C
° C/W
V
1. Mounted onto minimum pad board.
TYPICAL ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
Unit
OFF CHARACTERISTICS
V BRDSS
Drain to Source Sustaining Voltage (Internally Clamped)
14
16
17
V
(ID = 10 mA)
B VGSO
I DSS
I GSS
I g = 1.0 mA
Drain to Source Leakage Current
(V DS = 12 V , V GS = 0 V, T A = 25 ° C)
(V DS = 12 V, V GS = 0 V, T A = 85 ° C)
Gate Body Leakage Current
(V GS = 3.0 V, V DS = 0 V)
(V GS = 5.0 V, V DS = 0 V)
?
?
?
?
?
?
?
?
?
?
8
20
40
35
65
V
m A
m A
ON CHARACTERISTICS
V GS(th)
R DS(on)
I DS(on)
g FS
Gate Threshold Voltage
(V GS = V DS , I D = 1.0 mA)
(V GS = V DS , I D = 1.0 mA, T A = 85 ° C)
Drain to Source On ? Resistance
(I D = 250 mA, V GS = 3.0 V)
(I D = 500 mA, V GS = 3.0 V)
(I D = 500 mA, V GS = 5.0 V)
(I D = 500 mA, V GS = 3.0 V, T A =85 ° C)
(I D = 500 mA, V GS = 5.0 V, T A =85 ° C)
Output Continuous Current
(V DS = 0.25 V, V GS = 3.0 V)
(V DS = 0.25 V, V GS = 3.0 V, T A = 85 ° C)
Forward Transconductance
(V OUT = 12.0 V, I OUT = 0.25 A)
0.8
0.8
?
?
?
?
?
300
200
350
1.2
?
?
?
?
?
?
400
?
490
1.4
1.4
1.2
1.3
0.9
1.3
0.9
?
?
?
V
W
mA
mmhos
http://onsemi.com
2
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