参数资料
型号: NUF3102MU
厂商: ON SEMICONDUCTOR
英文描述: EEPROM; Capacity (bit): 64K; Organization (word): 8K; Organization (bit): x 8; Access time (ns): 100; Type: Parallel; Supply voltage (V): 2.7 to 5.5; Operating temperature (°C): -40 to 85; Package: SOP (28); Remarks:   Application: Consumer/Industrial
中文描述: 低电容EMI滤波器的3线在UDFN8包装的ESD保护
文件页数: 2/4页
文件大小: 85K
代理商: NUF3102MU
NUF3102MU
http://onsemi.com
2
MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
ESD Discharge IEC61000-4-2
Contact Discharge
Machine Model
Human Body Model
V
PP
14
0.4
8.0
kV
Operating Temperature Range
T
OP
-40 to 85
°
C
Storage Temperature Range
T
STG
-55 to 150
°
C
Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds)
T
L
260
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Maximum Reverse Working Voltage
V
RWM
5.0
V
Breakdown Voltage
V
BR
I
R
= 1.0 mA
6.0
7.0
8.0
V
Leakage Current
I
R
V
RWM
= 3.3 V
100
nA
Resistance
R
1
I
R
= 10 mA
85
100
115
Resistance
R
2
I
R
= 10 mA
40
47
54
Capacitance (Notes 1 and 2)
Cd
V
R
= 2.5 V, f = 1.0 MHz
10
13
16
pF
Cut-Off Frequency (Note 3)
f
3dB
Above this frequency,
appreciable attenuation occurs
150
MHz
1. Measured at 25
°
C.
2. Total Line Capacitance is two times the Diode Capacitance (Cd).
3. 50 source and 50
load termination.
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