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参数资料
| 型号： | NUF9005MNT4G |
| 厂商： | ON SEMICONDUCTOR |
| 英文描述： | Low Capacitance 8 Line EMI Filter with ESD Protection |
| 中文描述： | 8线低电容EMI滤波器与ESD保护 |
| 文件页数： | 2/4页 |
| 文件大小： | 69K |
| 代理商： | NUF9005MNT4G |
NUF9005MN
http://onsemi.com
2
MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
ESD Discharge IEC6100042
Contact Discharge
V
PP
14
kV
SteadyState Power per Resistor @ 25
°
C
P
R
328
mW
Operating Temperature Range
T
OP
40 to 85
°
C
Storage Temperature Range
T
STG
55 to 150
°
C
Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds)
T
L
260
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Maximum Reverse Working Voltage
V
RWM
5.0
V
Breakdown Voltage
V
BR
I
R
= 1.0 mA
6.0
7.0
8.0
V
Leakage Current
I
R
V
RWM
= 3.3 V
100
nA
Resistance
R
A
I
R
= 20 mA
85
100
115
Capacitance (Notes 1 and 2)
Cd
10
12
15
pF
CutOff Frequency (Note 3)
f
3dB
Above this frequency,
appreciable attenuation occurs
175
MHz
1. Measured at 25
°
C, V
= 2.5 V, f = 1.0 MHz.
2. Total Line Capacitance is 2 times the Diode Capacitance (Cd).
3. 50 source and 50
load termination.
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