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参数资料
| 型号： | NUP1105LT1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 参考电压二极管 |
| 英文描述： | Single Line CAN/LIN Bus Protector |
| 中文描述： | 350 W, BIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236AB |
| 封装： | CASE 318-08, TO-236, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 41K |
| 代理商： | NUP1105LT1 |
NUP1105L
http://onsemi.com
2
MAXIMUM RATINGS
(T
J
= 25
°
C, unless otherwise specified)
Symbol
Rating
Value
Unit
PPK
Peak Power Dissipation
8 x 20 s Double Exponential Waveform (Note 1)
350
W
T
J
T
J
T
L
ESD
Operating Junction Temperature Range
40 to 125
°
C
°
C
°
C
Storage Temperature Range
55 to 150
Lead Solder Temperature (10 s)
260
Human Body model (HBM)
Machine Model (MM)
IEC 6100042 Specification (Contact)
16
400
30
kV
V
kV
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not im-
plied, damage may occur and reliability may be affected.
1. Nonrepetitive current pulse per Figure 1.
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C, unless otherwise specified)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
RWM
Reverse Working Voltage
(Note 2)
24
V
V
BR
Breakdown Voltage
I
T
= 1 mA (Note 3)
25.7
28.4
V
I
R
Reverse Leakage Current
V
RWM
= 24 V
15
100
nA
V
C
Clamping Voltage
I
PP
= 5 A (8 x 20 s Waveform) (Note 4)
40
V
V
C
Clamping Voltage
I
PP
= 8 A (8 x 20 s Waveform) (Note 4)
44
V
I
PP
Maximum Peak Pulse Current
8 x 20 s Waveform (Note 4)
8.0
A
CJ
Capacitance
V
R
= 0 V, f = 1 MHz (Anode to GND)
V
R
= 0 V, f = 1 MHz (Anode to Anode)
60
30
pF
2. TVS devices are normally selected according to the working peak reverse voltage (V
RWM
), which should be equal or greater than the DC
or continuous peak operating voltage level.
3. V
BR
is measured at pulse test current I
T
.
4. Pulse waveform per Figure 1.
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相关代理商/技术参数 |
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| NUP1105LT1G | 功能描述:TVS 二极管 - 瞬态电压抑制器 27V LIN BUS Protection RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| NUP1105LT3 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Single Line CAN/LIN Bus Protector |
| NUP1105LT3G | 功能描述:TVS二极管阵列 ZR LIN BUS PROT SOT-23 RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| NUP1301 | 制造商:NXP Semiconductors 功能描述:DIODE DUAL TVS 220W 80V SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, 220W, 80V, SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, 220W, 80V, SOT23; TVS Polarity:Unidirectional; Reverse Stand-Off Voltage Vrwm:80V; Breakdown Voltage Max:100V; Clamping Voltage Vc Max:20V; Peak Pulse Current Ippm:11A; Diode Case Style:SOT-23; No. of Pins:3 ;RoHS Compliant: Yes 制造商:NXP Semiconductors 功能描述:ESD Suppressor Diode Arrays 30KV 3-Pin TO-236AB |
| NUP1301,215 | 功能描述:ESD 抑制器 ESD PROTECTION DIODE S2024D/SOT45 RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C |
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