参数资料
| 型号： | NUP1105LT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | IC BUS PROTECTOR CAN/LIN SOT-23 |
| 产品变化通告： | Wire Change 08/Jun/2009 |
| 标准包装： | 1 |
| 电压 - 反向隔离（标准值）： | 24V |
| 电压 - 击穿： | 25.7V |
| 功率（瓦特）： | 350W |
| 电极标记： | 双向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 标准包装 |
| 其它名称： | NUP1105LT1GOSDKR |
NUP1105LT1G, SZNUP1105LT1G
MAXIMUM RATINGS (T J = 25 ° C, unless otherwise specified)
Symbol
PPK
T J
T J
T L
ESD
Rating
Peak Power Dissipation
8 x 20 m s Double Exponential Waveform (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Lead Solder Temperature (10 s)
Human Body model (HBM)
Machine Model (MM)
IEC 61000 ? 4 ? 2 Specification (Contact)
Value
350
? 55 to 150
? 55 to 150
260
16
400
30
Unit
W
° C
° C
° C
kV
V
kV
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Non-repetitive current pulse per Figure 1.
ELECTRICAL CHARACTERISTICS (T J = 25 ° C, unless otherwise specified)
Symbol
V RWM
Parameter
Reverse Working Voltage
(Note 2)
Test Conditions
Min
24
Typ
Max
Unit
V
V BR
I R
V C
V C
I PP
CJ
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Clamping Voltage
Maximum Peak Pulse Current
Capacitance
I T = 1 mA (Note 3)
V RWM = 24 V
I PP = 5 A (8 x 20 m s Waveform) (Note 4)
I PP = 8 A (8 x 20 m s Waveform) (Note 4)
8 x 20 m s Waveform (Note 4)
V R = 0 V, f = 1 MHz (Anode to GND)
V R = 0 V, f = 1 MHz (Anode to Anode)
25.7
15
28.4
100
40
44
8.0
60
30
V
nA
V
V
A
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. TVS devices are normally selected according to the working peak reverse voltage (V RWM ), which should be equal or greater than the DC
or continuous peak operating voltage level.
3. V BR is measured at pulse test current I T .
4. Pulse waveform per Figure 1.
5. Include SZ-prefix devices where applicable.
http://onsemi.com
2
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相关代理商/技术参数 |
参数描述 |
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| NUP1105LT3 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Single Line CAN/LIN Bus Protector |
| NUP1105LT3G | 功能描述:TVS二极管阵列 ZR LIN BUS PROT SOT-23 RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| NUP1301 | 制造商:NXP Semiconductors 功能描述:DIODE DUAL TVS 220W 80V SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, 220W, 80V, SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, 220W, 80V, SOT23; TVS Polarity:Unidirectional; Reverse Stand-Off Voltage Vrwm:80V; Breakdown Voltage Max:100V; Clamping Voltage Vc Max:20V; Peak Pulse Current Ippm:11A; Diode Case Style:SOT-23; No. of Pins:3 ;RoHS Compliant: Yes 制造商:NXP Semiconductors 功能描述:ESD Suppressor Diode Arrays 30KV 3-Pin TO-236AB |
| NUP1301,215 | 功能描述:ESD 抑制器 ESD PROTECTION DIODE S2024D/SOT45 RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C |
| NUP1301215 | 制造商:NXP Semiconductors 功能描述:TVS-DIODE 250mW 20V UNIDIRECTIONAL S |
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