参数资料
型号: NUP2105LT1
厂商: ON SEMICONDUCTOR
元件分类: 参考电压二极管
英文描述: Dual Line CAN Bus Protector
中文描述: 350 W, BIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236AB
封装: CASE 318-08, TO-236, 3 PIN
文件页数: 2/8页
文件大小: 57K
代理商: NUP2105LT1
NUP2105L
http://onsemi.com
2
MAXIMUM RATINGS
(T
J
= 25
°
C, unless otherwise specified)
Symbol
Rating
Value
Unit
PPK
Peak Power Dissipation
8 x 20 s Double Exponential Waveform (Note 1)
350
W
T
J
T
J
T
L
ESD
Operating Junction Temperature Range
40 to 125
°
C
°
C
°
C
Storage Temperature Range
55 to 150
Lead Solder Temperature (10 s)
260
Human Body model (HBM)
Machine Model (MM)
IEC 6100042 Specification (Contact)
16
400
30
kV
V
kV
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not im-
plied, damage may occur and reliability may be affected.
1. Nonrepetitive current pulse per Figure 1.
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C, unless otherwise specified)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
RWM
Reverse Working Voltage
(Note 2)
24
V
V
BR
Breakdown Voltage
I
T
= 1 mA (Note 3)
26.2
32
V
I
R
Reverse Leakage Current
V
RWM
= 24 V
15
100
nA
V
C
Clamping Voltage
I
PP
= 5 A (8 x 20 s Waveform)
(Note 4)
40
V
V
C
Clamping Voltage
I
PP
= 8 A (8 x 20 s Waveform)
(Note 4)
44
V
I
PP
Maximum Peak Pulse Current
8 x 20 s Waveform (Note 4)
8.0
A
CJ
Capacitance
V
R
= 0 V, f = 1 MHz (Line to GND)
30
pF
2. TVS devices are normally selected according to the working peak reverse voltage (V
RWM
), which should be equal or greater than the DC
or continuous peak operating voltage level.
3. V
BR
is measured at pulse test current I
T
.
4. Pulse waveform per Figure 1.
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