- 您现在的位置：买卖IC网 > Datasheet目录238 > NUP2114UCMR6T1G (ON Semiconductor)TVS ARRAY ESD 6-TSOP Datasheet资料下载
参数资料
| 型号： | NUP2114UCMR6T1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | TVS ARRAY ESD 6-TSOP |
| 标准包装： | 3,000 |
| 电压 - 反向隔离（标准值）： | 5V |
| 电压 - 击穿： | 5.5V |
| 电极标记： | 2 通道阵列 - 双向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74，SOT-457 |
| 供应商设备封装： | 6-TSOP |
| 包装： | 带卷 (TR) |
| 其它名称： | NUP2114UCMR6T1G-ND NUP2114UCMR6T1GOSTR |
NUP2114 Series, SNUP2114UCMR6T1G
ELECTRICAL CHARACTERISTICS
(T A = 25 ? C unless otherwise noted)
Symbol Parameter
I PP
Maximum Reverse Peak Pulse Current
V C
Clamping Voltage @ I PP
I F
I
I R V F
V RWM
I R
V BR
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V RWM
Breakdown Voltage @ I T
V C V BR V RWM
I T
V
I T
I F
Test Current
Forward Current
V F
P pk
Forward Voltage @ I F
Peak Power Dissipation
I PP
C Max. Capacitance @ V R = 0 and f = 1.0 MHz
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
ELECTRICAL CHARACTERISTICS (T J =25 ? C unless otherwise specified)
Uni ? Directional TVS
Parameter
Reverse Working Voltage
Breakdown Voltage
Symbol
V RWM
V BR
Conditions
(Note 1)
I T = 1 mA, (Note 2)
Min
5.5
Typ
7.5
Max
5.0
Unit
V
V
Reverse Leakage Current
Clamping Voltage
Clamping Voltage
Maximum Peak Pulse Current
I R
V C
V C
I PP
V RWM = 5 V
I PP = 5 A (Note 3)
I PP = 8 A (Note 3)
8x20 m s Waveform
9.0
10
1.0
12
m A
V
V
A
Junction Capacitance
C J
V R = 0 V, f = 1 MHz between I/O Pins and GND
0.8
1.0
pF
Junction Capacitance
Clamping Voltage
Clamping Voltage
C J
V C
V C
V R = 0 V, f = 1 MHz between I/O Pins
@ I PP = 1 A (Note 4)
Per IEC 61000 ? 4 ? 2 (Note 5)
Figures 1 and 2
0.5
12
pF
V
V
1. TVS devices are normally selected according to the working peak reverse voltage (V RWM ), which should be equal or greater than the DC
or continuous peak operating voltage level.
2. V BR is measured at pulse test current I T .
3. Nonrepetitive current pulse (Pin 5 to Pin 2)
4. Surge current waveform per Figure 5.
5. Typical waveform. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
6. Include S-prefix devices where applicable.
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000 ? 4 ? 2
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC61000 ? 4 ? 2
http://onsemi.com
2
相关PDF资料 |
PDF描述 |
|---|---|
| NUP2201MR6T1 | IC TVS DIODE ARRAY HS LINE 6TSOP |
| NUP2202W1T2G | IC DIODE/TVS ARRAY HS SOT-363 |
| NUP2301MW6T1 | IC TVS DIODE ARRAY 2LINE SC88 |
| NUP3112UPMUTAG | TVS QUAD ARRAY LOW CAP 6-UDFN |
| NUP3115UPMUTAG | TVS QUAD ARRAY LOW CAP 6-UDFN |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NUP2114UPXV5 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Transient Voltage Suppressors |
| NUP2114UPXV5T1G | 功能描述:TVS二极管阵列 LOW CAP TVS ARRAY RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| NUP2115L | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Dual Line FlexRay Bus Protector |
| NUP2115LT1G | 制造商:ON Semiconductor 功能描述:ESD PROTECTION FOR FLEXRA - Tape and Reel 制造商:ON Semiconductor 功能描述:REEL / ESD PROTECTION FOR FLEXRA |
| NUP2115LT3G | 制造商:ON Semiconductor 功能描述:ESD PROTECTION FOR FLEXRA - Tape and Reel 制造商:ON Semiconductor 功能描述:ESD PROTECTION FOR FLEXRA - Cut TR (SOS) 制造商:ON Semiconductor 功能描述:REEL / ESD PROTECTION FOR FLEXRA |
发布紧急采购，3分钟左右您将得到回复。