参数资料
| 型号： | NUP4201MR6T1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | IC TVS DIODE ARRAY HS LINE 6TSOP |
| 标准包装： | 1 |
| 电压 - 反向隔离（标准值）： | 5V |
| 电压 - 击穿： | 6V |
| 功率（瓦特）： | 500W |
| 电极标记： | 4 通道阵列 - 双向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74，SOT-457 |
| 供应商设备封装： | 6-TSOP |
| 包装： | 标准包装 |
| 产品目录页面： | 1120 (CN2011-ZH PDF) |
| 其它名称： | NUP4201MR6T1GOSDKR |
NUP4201MR6
ELECTRICAL CHARACTERISTICS
(T A = 25 ° C unless otherwise noted)
Symbol Parameter
I PP
Maximum Reverse Peak Pulse Current
V C
Clamping Voltage @ I PP
I F
I
I R V F
V RWM
I R
V BR
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V RWM
Breakdown Voltage @ I T
V C V BR V RWM
I T
V
I T
Test Current
I F
V F
P pk
C
Forward Current
Forward Voltage @ I F
Peak Power Dissipation
Capacitance @ V R = 0 and f = 1.0 MHz
I PP
Uni ? Directional TVS
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
ELECTRICAL CHARACTERISTICS (T J =25 ° C unless otherwise specified)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Clamping Voltage
Maximum Peak Pulse Current
V RWM
V BR
I R
V C
V C
I PP
(Note 2)
I T =1 mA, (Note 3)
V RWM = 5 V
I PP = 5 A (Note 4)
I PP = 8 A (Note 4)
8x20 m s Waveform (Note 4)
6.0
5.0
5.0
12.5
20
25
V
V
m A
V
V
A
Junction Capacitance
Junction Capacitance
C J
C J
V R = 0 V, f=1 MHz between I/O Pins and GND
V R = 0 V, f=1 MHz between I/O Pins
3.0
1.5
5.0
3.0
pF
pF
Clamping Voltage
Clamping Voltage
V C
V C
@ I PP = 1 A (Notes 5 and 6)
Per IEC 61000 ? 4 ? 2 (Note 7)
Figure 1 and 2
16.6
V
V
2. TVS devices are normally selected according to the working peak reverse voltage (V RWM ), which should be equal or greater than the DC
or continuous peak operating voltage level.
3. V BR is measured at pulse test current I T .
4. Non ? repetitive current pulse per Figure 5 (Pin 5 to Pin 2)
5. Non ? repetitive current pulse per FIgure 5 (Any I/O Pins)
6. Surge current waveform per Figure 5.
7. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000 ? 4 ? 2
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC61000 ? 4 ? 2
http://onsemi.com
2
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