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参数资料
| 型号： | NUP4212UPMUTAG |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 描述： | TVS QUAD ARRAY LOW CAP 6-UDFN |
| 标准包装： | 3,000 |
| 电压 - 反向隔离（标准值）： | 4V |
| 电压 - 击穿： | 5.2V |
| 电极标记： | 4 通道阵列 - 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-UFDFN 裸露焊盘 |
| 供应商设备封装： | 6-UDFN（1.6x1.6） |
| 包装： | 带卷 (TR) |
NUP4212UPMU
Quad Transient Voltage
Suppressor Array
ESD Protection Diodes with Ultra ? Low
(0.7 pF) Capacitance
The four ? line voltage transient suppressor array is designed to protect
voltage ? sensitive components that require ultra ? low capacitance from
ESD and transient voltage events. This device features a common anode
design which can protect up to four independent high speed data lines
and 1 or 2 separate 15 V TVS lines in a single six ? lead UDFN low
profile package.
Excellent clamping capability, low capacitance, low leakage, and fast
response time make these parts ideal for ESD protection on designs
where board space is at a premium. Because of its low capacitance, it is
suited for use in high frequency designs such as a USB 2.0 high speed.
This device can be configured as a dual port USB device.
D 1
http://onsemi.com
D 2 D 3 D 4 V 1
V 2
1
6
Features
? Low Capacitance Data Lines (0.7 pF Typical)
? Protects up to Four Data Lines Plus a V CC Pin
? UDFN Package, 1.6 x 1.6 mm
? Low Profile of 0.50 mm for Ultra Slim Design
? V 1 , V 2 Pin = 15 V Protection
? D 1 , D 2 , D 3 , and D 4 Pins = 5.2 V Minimum Protection
? ESD Rating: IEC61000 ? 4 ? 2: Level 4
? Contact (14 kV)
? This is a Pb ? Free Device
Typical Applications
? USB 2.0 High ? Speed Interface
? Cell Phones
? MP3 Players
? SIM Card Protection
MAXIMUM RATINGS (T J = 25 ° C, unless otherwise specified)
1
MARKING
DIAGRAM
UDFN6 1.6 X 1.6
MU SUFFIX P2 M G
CASE 517AP G
P2 = Specific Device Code
M = Date Code
G = Pb ? Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
D 1 1 6 V 2
D 2 2 GND 5 V 1
D 3 3 4 D 4
Symbol
Rating
Value
Unit
T J
Operating Junction Temperature Range
? 40 to 125
° C
ORDERING INFORMATION
T STG
Storage Temperature Range
? 55 to 150
° C
Device
Package
Shipping ?
T L Lead Solder Temperature – Maximum 260 ° C
(10 seconds)
ESD IEC 61000 ? 4 ? 2 Contact 14000 V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
NUP4212UPMUTAG UDFN6 3000/Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
See Application Note AND8308/D for further description of survivability specs.
? Semiconductor Components Industries, LLC, 2009
August, 2009 ? Rev. 1
1
Publication Order Number:
NUP4212UPMU/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NUP4301 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Low cap. diode array for 2 Line High Speed USB protection devic |
| NUP4301MR6T1 | 功能描述:整流器 Low Cap. for ESD RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| NUP4301MR6T1/D | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Low Capacitance Diode Array for ESD Protection in Four Data Lines |
| NUP4301MR6T1_05 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Low Capacitance Diode Array for ESD Protection in Four Data Lines |
| NUP4301MR6T1G | 功能描述:整流器 Low Cap. for ESD Protection in 4 Line RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
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