参数资料
| 型号： | NUP4301MR6T1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | IC TVS DIODE ARRAY 70V SC74 |
| 产品变化通告： | LTB Notification 03/Jan/2008 |
| 标准包装： | 3,000 |
| 电压 - 击穿： | 70V |
| 电极标记： | 4 通道阵列 - 双向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74，SOT-457 |
| 供应商设备封装： | SC-74 |
| 包装： | 带卷 (TR) |
| 其它名称： | NUP4301MR6T1OS |
NUP4301MR6T1G, SZNUP4301MR6T1G
MAXIMUM RATINGS (Each Diode) (T J = 25 ? C unless otherwise noted)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Repetitive Peak Reverse Voltage
Average Rectified Forward Current (Note 1) (averaged over any 20 ms period)
Repetitive Peak Forward Current
Non ? Repetitive Peak Forward Current
t = 1.0 m s
t = 1.0 ms
t = 1.0 S
Symbol
V R
I F
I FM(surge)
V RRM
I F(AV)
I FRM
I FSM
Value
70
200
500
70
715
450
2.0
1.0
0.5
Unit
Vdc
mAdc
mAdc
V
mA
mA
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. FR ? 5 = 1.0 0.75 0.062 in.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction ? to ? Ambient
Lead Solder Temperature, Maximum 10 Seconds Duration
Junction Temperature
Storage Temperature
Symbol
R q JA
T L
T J
T stg
Max
556
260
? 40 to +85
? 55 to +150
Unit
? C/W
? C
? C
? C
ELECTRICAL CHARACTERISTICS (T J = 25 ? C unless otherwise noted) (Each Diode)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I (BR) = 100 m A)
Reverse Voltage Leakage Current
(V R = 70 Vdc)
(V R = 25 Vdc, T J = 150 ? C)
(V R = 70 Vdc, T J = 150 ? C)
Capacitance (between I/O pins)
(V R = 0 V, f = 1.0 MHz)
Capacitance (between I/O pin and ground)
(V R = 0 V, f = 1.0 MHz)
Forward Voltage
(I F = 1.0 mAdc)
(I F = 10 mAdc)
(I F = 50 mAdc)
(I F = 150 mAdc)
V (BR)
I R
C D
C D
V F
70
?
?
?
?
?
?
?
?
?
?
?
?
?
0.8
1.6
?
?
?
?
?
2.5
30
50
1.5
3
715
855
1000
1250
Vdc
m Adc
pF
pF
mV dc
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Include SZ-prefix devices where applicable.
http://onsemi.com
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NUP4301MR6T1/D | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Low Capacitance Diode Array for ESD Protection in Four Data Lines |
| NUP4301MR6T1_05 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Low Capacitance Diode Array for ESD Protection in Four Data Lines |
| NUP4301MR6T1G | 功能描述:整流器 Low Cap. for ESD Protection in 4 Line RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| NUP4301MR6T1G | 制造商:ON Semiconductor 功能描述:TVS DIODE ARRAY 70V TSOP 制造商:ON Semiconductor 功能描述:TVS DIODE ARRAY, 70V, TSOP |
| NUP4301MR6T1G-CUT TAPE | 制造商:ON 功能描述:NUP4301 Series 5 pF Diode Array for ESD Protection in 4 Data Lines - TSOP-6 |
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